High-Performance Carbon Nanotube-Based Transient Complementary Electronics.

Xia, Fan; Xia, Tian; Xiang, Li; Liu, Fang; Jia, Weijie; Liang, Xuelei; Hu, Youfan

Xia, Fan; Xia, Tian; Xiang, Li; Liu, Fang; Jia, Weijie; Liang, Xuelei; Hu, Youfan.

Afiliación

Xia F; Key Laboratory for the Physics and Chemistry of Nanodevices, Center for Carbon-Based Electronics, and School of Electronics, Peking University, Beijing 100871, China.
Xia T; Academy for Advanced Interdisciplinary Studies, Peking University, Beijing 100871, China.
Xiang L; Key Laboratory for the Physics and Chemistry of Nanodevices, Center for Carbon-Based Electronics, and School of Electronics, Peking University, Beijing 100871, China.
Liu F; Academy for Advanced Interdisciplinary Studies, Peking University, Beijing 100871, China.
Jia W; Key Laboratory for the Physics and Chemistry of Nanodevices, Center for Carbon-Based Electronics, and School of Electronics, Peking University, Beijing 100871, China.
Liang X; College of Materials and Engineering, Hunan University, Changsha 410082, China.
Hu Y; Key Laboratory for the Physics and Chemistry of Nanodevices, Center for Carbon-Based Electronics, and School of Electronics, Peking University, Beijing 100871, China.

ACS Appl Mater Interfaces ; 14(10): 12515-12522, 2022 Mar 16.

Article en En | MEDLINE | ID: mdl-35230800

Palabras clave

CMOS; carbon nanotube; electrostatic doping; high performance; transient

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Texto completo: 1 Colección: 01-internacional Banco de datos: MEDLINE Idioma: En Revista: ACS Appl Mater Interfaces Asunto de la revista: BIOTECNOLOGIA / ENGENHARIA BIOMEDICA Año: 2022 Tipo del documento: Article País de afiliación: China

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