Investigation of the Integration of Strained Ge Channel with Si-Based FinFETs.

Xu, Buqing; Wang, Guilei; Du, Yong; Miao, Yuanhao; Wu, Yuanyuan; Kong, Zhenzhen; Su, Jiale; Li, Ben; Yu, Jiahan; Radamson, Henry H

Xu, Buqing; Wang, Guilei; Du, Yong; Miao, Yuanhao; Wu, Yuanyuan; Kong, Zhenzhen; Su, Jiale; Li, Ben; Yu, Jiahan; Radamson, Henry H.

Afiliación

Xu B; Institute of Microelectronics, Chinese Academy of Sciences, Beijing 100029, China.
Wang G; School of Integrated Circuits, University of Chinese Academy of Sciences, Beijing 100029, China.
Du Y; Beijing Superstring Academy of Memory Technology, Beijing 100176, China.
Miao Y; Institute of Microelectronics, Chinese Academy of Sciences, Beijing 100029, China.
Wu Y; School of Integrated Circuits, University of Chinese Academy of Sciences, Beijing 100029, China.
Kong Z; Institute of Microelectronics, Chinese Academy of Sciences, Beijing 100029, China.
Su J; Research and Development Center of Optoelectronic Hybrid IC, Guangdong Greater Bay Area Institute of Integrated Circuit and System, Guangzhou 510535, China.
Li B; Research and Development Center of Optoelectronic Hybrid IC, Guangdong Greater Bay Area Institute of Integrated Circuit and System, Guangzhou 510535, China.
Yu J; Institute of Microelectronics, Chinese Academy of Sciences, Beijing 100029, China.
Radamson HH; School of Integrated Circuits, University of Chinese Academy of Sciences, Beijing 100029, China.

Nanomaterials (Basel) ; 12(9)2022 Apr 19.

Article en En | MEDLINE | ID: mdl-35564112

Palabras clave

CMOS; FinFETs; Ge selective epitaxy; compressive strain

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Texto completo: 1 Colección: 01-internacional Banco de datos: MEDLINE Idioma: En Revista: Nanomaterials (Basel) Año: 2022 Tipo del documento: Article País de afiliación: China

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