Parameters Design and Optimization of SiC MOSFET Driving Circuit with Consideration of Comprehensive Loss and Voltage Stress.

Qin, Haihong; Ba, Zhenhua; Xie, Sixuan; Zhang, Zimo; Chen, Wenming; Xun, Qian

Qin, Haihong; Ba, Zhenhua; Xie, Sixuan; Zhang, Zimo; Chen, Wenming; Xun, Qian.

Afiliación

Qin H; Department of Electrical Engineering, the Center for More-Electric-Aircraft Power System, Nanjing University of Aeronautics and Astronautics, Nanjing 211106, China.
Ba Z; Department of Electrical Engineering, the Center for More-Electric-Aircraft Power System, Nanjing University of Aeronautics and Astronautics, Nanjing 211106, China.
Xie S; Department of Electrical Engineering, the Center for More-Electric-Aircraft Power System, Nanjing University of Aeronautics and Astronautics, Nanjing 211106, China.
Zhang Z; Department of Electrical Engineering, the Center for More-Electric-Aircraft Power System, Nanjing University of Aeronautics and Astronautics, Nanjing 211106, China.
Chen W; Department of Electrical Engineering, the Center for More-Electric-Aircraft Power System, Nanjing University of Aeronautics and Astronautics, Nanjing 211106, China.
Xun Q; Department of Electrical Engineering, Chalmers University of Technology, 41279 Gothenburg, Sweden.

Micromachines (Basel) ; 14(3)2023 Feb 21.

Article en En | MEDLINE | ID: mdl-36984912

Palabras clave

SiC MOSFET; driving circuit; gate-source voltage; parameters optimization

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Texto completo: 1 Colección: 01-internacional Banco de datos: MEDLINE Idioma: En Revista: Micromachines (Basel) Año: 2023 Tipo del documento: Article País de afiliación: China

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