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Remote epitaxial interaction through graphene.
Chang, Celesta S; Kim, Ki Seok; Park, Bo-In; Choi, Joonghoon; Kim, Hyunseok; Jeong, Junseok; Barone, Matthew; Parker, Nicholas; Lee, Sangho; Zhang, Xinyuan; Lu, Kuangye; Suh, Jun Min; Kim, Jekyung; Lee, Doyoon; Han, Ne Myo; Moon, Mingi; Lee, Yun Seog; Kim, Dong-Hwan; Schlom, Darrell G; Hong, Young Joon; Kim, Jeehwan.
Afiliación
  • Chang CS; Department of Mechanical Engineering, Massachusetts Institute of Technology, Cambridge, MA 02139, USA.
  • Kim KS; Research Laboratory of Electronics, Massachusetts Institute of Technology, Cambridge, MA 02139, USA.
  • Park BI; Department of Mechanical Engineering, Massachusetts Institute of Technology, Cambridge, MA 02139, USA.
  • Choi J; Research Laboratory of Electronics, Massachusetts Institute of Technology, Cambridge, MA 02139, USA.
  • Kim H; Department of Mechanical Engineering, Massachusetts Institute of Technology, Cambridge, MA 02139, USA.
  • Jeong J; Research Laboratory of Electronics, Massachusetts Institute of Technology, Cambridge, MA 02139, USA.
  • Barone M; GRI-TPC International Research Center and Department of Nanotechnology and Advanced Materials Engineering, Sejong University, Seoul 05006, Republic of Korea.
  • Parker N; Department of Mechanical Engineering, Massachusetts Institute of Technology, Cambridge, MA 02139, USA.
  • Lee S; Department of Mechanical Engineering, Massachusetts Institute of Technology, Cambridge, MA 02139, USA.
  • Zhang X; Department of Materials Science and Engineering, Cornell University, Ithaca, NY 14850, USA.
  • Lu K; Department of Materials Science and Engineering, Cornell University, Ithaca, NY 14850, USA.
  • Suh JM; Department of Mechanical Engineering, Massachusetts Institute of Technology, Cambridge, MA 02139, USA.
  • Kim J; Research Laboratory of Electronics, Massachusetts Institute of Technology, Cambridge, MA 02139, USA.
  • Lee D; Research Laboratory of Electronics, Massachusetts Institute of Technology, Cambridge, MA 02139, USA.
  • Han NM; Department of Materials Science and Engineering, Massachusetts Institute of Technology, Cambridge, MA 02139, USA.
  • Moon M; Department of Mechanical Engineering, Massachusetts Institute of Technology, Cambridge, MA 02139, USA.
  • Lee YS; Department of Mechanical Engineering, Massachusetts Institute of Technology, Cambridge, MA 02139, USA.
  • Kim DH; Research Laboratory of Electronics, Massachusetts Institute of Technology, Cambridge, MA 02139, USA.
  • Schlom DG; Department of Mechanical Engineering, Massachusetts Institute of Technology, Cambridge, MA 02139, USA.
  • Hong YJ; Department of Mechanical Engineering, Massachusetts Institute of Technology, Cambridge, MA 02139, USA.
  • Kim J; Department of Mechanical Engineering, Massachusetts Institute of Technology, Cambridge, MA 02139, USA.
Sci Adv ; 9(42): eadj5379, 2023 Oct 20.
Article en En | MEDLINE | ID: mdl-37862426
ABSTRACT
The concept of remote epitaxy involves a two-dimensional van der Waals layer covering the substrate surface, which still enable adatoms to follow the atomic motif of the underlying substrate. The mode of growth must be carefully defined as defects, e.g., pinholes, in two-dimensional materials can allow direct epitaxy from the substrate, which, in combination with lateral epitaxial overgrowth, could also form an epilayer. Here, we show several unique cases that can only be observed for remote epitaxy, distinguishable from other two-dimensional material-based epitaxy mechanisms. We first grow BaTiO3 on patterned graphene to establish a condition for minimizing epitaxial lateral overgrowth. By observing entire nanometer-scale nuclei grown aligned to the substrate on pinhole-free graphene confirmed by high-resolution scanning transmission electron microscopy, we visually confirm that remote epitaxy is operative at the atomic scale. Macroscopically, we also show variations in the density of GaN microcrystal arrays that depend on the ionicity of substrates and the number of graphene layers.
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Texto completo: 1 Colección: 01-internacional Banco de datos: MEDLINE Idioma: En Revista: Sci Adv Año: 2023 Tipo del documento: Article País de afiliación: Estados Unidos
Texto completo
Imprimir
XML
PubMed Links
Buscar en Google

Texto completo: 1 Colección: 01-internacional Banco de datos: MEDLINE Idioma: En Revista: Sci Adv Año: 2023 Tipo del documento: Article País de afiliación: Estados Unidos