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Tungsten Nitride (W5N6): An Ultraresilient 2D Semimetal.
Chin, Hao-Ting; Wang, Deng-Chi; Gulo, Desman Perdamaian; Yao, Yu-Chi; Yeh, Hao-Chen; Muthu, Jeyavelan; Chen, Ding-Rui; Kao, Tzu-Chun; Kalbác, Martin; Lin, Ping-Hui; Cheng, Cheng-Maw; Hofmann, Mario; Liang, Chi-Te; Liu, Hsiang-Lin; Chuang, Feng-Chuan; Hsieh, Ya-Ping.
Afiliación
  • Chin HT; Molecular Science and Technology Program, Taiwan International Graduate Program, Academia Sinica, Taipei 10617, Taiwan.
  • Wang DC; International Graduate Program of Molecular Science and Technology, National Taiwan University, Taipei 10617, Taiwan.
  • Gulo DP; Institute of Atomic and Molecular Sciences, Academia Sinica, Taipei 10617, Taiwan.
  • Yao YC; Department of Physics, National Sun Yat-Sen University, Kaohsiung 80424, Taiwan.
  • Yeh HC; Department of Physics, National Taiwan Normal University, Taipei 11677, Taiwan.
  • Muthu J; Institute of Atomic and Molecular Sciences, Academia Sinica, Taipei 10617, Taiwan.
  • Chen DR; Department of Physics, National Taiwan University, Taipei 10617, Taiwan.
  • Kao TC; Institute of Physics, Academia Sinica, Taipei 115201, Taiwan.
  • Kalbác M; Department of Physics, National Taiwan University, Taipei 10617, Taiwan.
  • Lin PH; International Graduate Program of Nano Science and Technology, National Taiwan University, Taipei 10617, Taiwan.
  • Cheng CM; Molecular Science and Technology Program, Taiwan International Graduate Program, Academia Sinica, Taipei 10617, Taiwan.
  • Hofmann M; International Graduate Program of Molecular Science and Technology, National Taiwan University, Taipei 10617, Taiwan.
  • Liang CT; Institute of Atomic and Molecular Sciences, Academia Sinica, Taipei 10617, Taiwan.
  • Liu HL; Graduate Institute of Applied Physics, National Taiwan University, Taipei 10617, Taiwan.
  • Chuang FC; J. Heyrovský Institute of Physical Chemistry, Czech Academy of Sciences, Dolejskova 2155/3, 182 23 Prague, Czech Republic.
  • Hsieh YP; National Synchrotron Radiation Research Center (NSRRC), Hsinchu 300092, Taiwan.
Nano Lett ; 24(1): 67-73, 2024 Jan 10.
Article en En | MEDLINE | ID: mdl-38149785
ABSTRACT
Two-dimensional transition metal nitrides offer intriguing possibilities for achieving novel electronic and mechanical functionality owing to their distinctive and tunable bonding characteristics compared to other 2D materials. We demonstrate here the enabling effects of strong bonding on the morphology and functionality of 2D tungsten nitrides. The employed bottom-up synthesis experienced a unique substrate stabilization effect beyond van-der-Waals epitaxy that favored W5N6 over lower metal nitrides. Comprehensive structural and electronic characterization reveals that monolayer W5N6 can be synthesized at large scale and shows semimetallic behavior with an intriguing indirect band structure. Moreover, the material exhibits exceptional resilience against mechanical damage and chemical reactions. Leveraging these electronic properties and robustness, we demonstrate the application of W5N6 as atomic-scale dry etch stops that allow the integration of high-performance 2D materials contacts. These findings highlight the potential of 2D transition metal nitrides for realizing advanced electronic devices and functional interfaces.
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Texto completo: 1 Colección: 01-internacional Banco de datos: MEDLINE Idioma: En Revista: Nano Lett Año: 2024 Tipo del documento: Article País de afiliación: Taiwán

Texto completo: 1 Colección: 01-internacional Banco de datos: MEDLINE Idioma: En Revista: Nano Lett Año: 2024 Tipo del documento: Article País de afiliación: Taiwán