Si/Ge phototransistor with responsivity >1000A/W on a silicon photonics platform.
Opt Express
; 32(2): 2271-2280, 2024 Jan 15.
Article
en En
| MEDLINE
| ID: mdl-38297761
ABSTRACT
In this article, we report a Si/Ge waveguide phototransistor with high responsivity and low dark current under low bias voltages, due to an engineered electric field distribution. The photodetector consists of n-i-p-i-n doping regions and shows a responsivity of 606 A/W at 1 V bias, and 1032 A/W at 2.8V bias with an input optical power of -50 dBm, and dark current of 4 µA and 42 µA respectively. This is achieved by placing two p+-doped regions in the silicon slab region beneath the Ge epitaxial layer. A measured small signal -3 dB bandwidth of 1.5 GHz with a -80 dBc/Hz phase noise response at 1 KHz frequency offset were demonstrated experimentally.
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01-internacional
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MEDLINE
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En
Revista:
Opt Express
Asunto de la revista:
OFTALMOLOGIA
Año:
2024
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Article