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Strain-engineering of band gaps in piezoelectric boron nitride nanoribbons.
Qi, Jingshan; Qian, Xiaofeng; Qi, Liang; Feng, Ji; Shi, Daning; Li, Ju.
Afiliação
  • Qi J; College of Physics and Electronic Engineering, Jiangsu Normal University, Xuzhou 221116, China.
Nano Lett ; 12(3): 1224-8, 2012 Mar 14.
Article em En | MEDLINE | ID: mdl-22364268
ABSTRACT
Two-dimensional atomic sheets such as graphene and boron nitride monolayers represent a new class of nanostructured materials for a variety of applications. However, the intrinsic electronic structure of graphene and h-BN atomic sheets limits their direct application in electronic devices. By first-principles density functional theory calculations we demonstrate that band gap of zigzag BN nanoribbons can be significantly tuned under uniaxial tensile strain. The unexpected sensitivity of band gap results from reduced orbital hybridization upon elastic strain. Furthermore, sizable dipole moment and piezoelectric effect are found in these ribbons owing to structural asymmetry and hydrogen passivation. This will offer new opportunities to optimize two-dimensional nanoribbons for applications such as electronic, piezoelectric, photovoltaic, and opto-electronic devices.
Assuntos

Texto completo: 1 Coleções: 01-internacional Base de dados: MEDLINE Assunto principal: Compostos de Boro / Modelos Moleculares / Cristalização / Nanoestruturas / Modelos Químicos Idioma: En Revista: Nano Lett Ano de publicação: 2012 Tipo de documento: Article País de afiliação: China

Texto completo: 1 Coleções: 01-internacional Base de dados: MEDLINE Assunto principal: Compostos de Boro / Modelos Moleculares / Cristalização / Nanoestruturas / Modelos Químicos Idioma: En Revista: Nano Lett Ano de publicação: 2012 Tipo de documento: Article País de afiliação: China