Deposited low temperature silicon GHz modulator.
Opt Express
; 21(22): 26688-92, 2013 Nov 04.
Article
em En
| MEDLINE
| ID: mdl-24216890
ABSTRACT
We demonstrate gigahertz electro-optic modulator fabricated on low temperature polysilicon using excimer laser annealing technique compatible with CMOS backend integration. Carrier injection modulation at 3 Gbps is achieved. These results open up an array of possibilities for silicon photonics including photonics on DRAM and on flexible substrates.
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Coleções:
01-internacional
Base de dados:
MEDLINE
Idioma:
En
Revista:
Opt Express
Assunto da revista:
OFTALMOLOGIA
Ano de publicação:
2013
Tipo de documento:
Article