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Enhanced resistive switching memory characteristics and mechanism using a Ti nanolayer at the W/TaO x interface.
Prakash, Amit; Maikap, Siddheswar; Chiu, Hsien-Chin; Tien, Ta-Chang; Lai, Chao-Sung.
Afiliação
  • Prakash A; Department of Electronic Engineering, Chang Gung University, Tao-Yuan 333, Taiwan.
  • Maikap S; Department of Electronic Engineering, Chang Gung University, Tao-Yuan 333, Taiwan.
  • Chiu HC; Department of Electronic Engineering, Chang Gung University, Tao-Yuan 333, Taiwan.
  • Tien TC; Material and Chemical Research Laboratories, Industrial Technology Research Institute, Hsinchu 310, Taiwan.
  • Lai CS; Department of Electronic Engineering, Chang Gung University, Tao-Yuan 333, Taiwan.
Nanoscale Res Lett ; 9(1): 152, 2014.
Article em En | MEDLINE | ID: mdl-24791160
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Texto completo: 1 Coleções: 01-internacional Base de dados: MEDLINE Idioma: En Revista: Nanoscale Res Lett Ano de publicação: 2014 Tipo de documento: Article País de afiliação: Taiwan
Texto completo
Imprimir
XML
PubMed Links
Buscar no Google

Texto completo: 1 Coleções: 01-internacional Base de dados: MEDLINE Idioma: En Revista: Nanoscale Res Lett Ano de publicação: 2014 Tipo de documento: Article País de afiliação: Taiwan