Influence of patterned sapphire substrates with different symmetry on the light output power of InGaN-based LEDs.
Nanoscale Res Lett
; 9(1): 596, 2014.
Article
em En
| MEDLINE
| ID: mdl-25392706
ABSTRACT
This paper aims to investigate the light output power (LOP) of InGaN-based light-emitting diodes (LEDs) grown on patterned sapphire substrates (PSSs) with different symmetry. The GaN epitaxial layers grown on the hexagonal lattice arrangement PSS (HLAPSS) have a lower compressive strain than the ones grown on the square lattice arrangement PSS (SLAPSS). The quantum-confined Stark effect (QCSE) is also affected by the residual compressive strain. Based on the experimentally measured data and the ray tracing simulation results, the InGaN-based LED with the HLAPSS has a higher LOP than the one with the SLAPSS due to the weaker QCSE within multiple-quantum wells (MQWs).
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1
Coleções:
01-internacional
Base de dados:
MEDLINE
Idioma:
En
Revista:
Nanoscale Res Lett
Ano de publicação:
2014
Tipo de documento:
Article
País de afiliação:
Taiwan