Siâº-implanted Si-wire waveguide photodetectors for the mid-infrared.
Opt Express
; 22(22): 27415-24, 2014 Nov 03.
Article
em En
| MEDLINE
| ID: mdl-25401890
ABSTRACT
CMOS-compatible Siâº-implanted Si-waveguide p-i-n photodetectors operating at room temperature and at mid-infrared wavelengths from 2.2 to 2.3 µm are demonstrated. Responsivities of 9.9 ± 2.0 mA/W are measured at a 5 V reverse bias with an estimated internal quantum efficiency of 2.7 - 4.5%. The dark current is found to vary from a few microamps down to less than a nanoamp after a post-implantation annealing of 350°C. The measured photocurrent dependence on input power shows a linear correspondence over more than three decades, and the frequency response of a 250 µm-length p-i-n device is measured to be ~1.7 GHz for a wavelength of λ = 2.2 µm, thus potentially opening up new communication bands for photonic integrated circuits.
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01-internacional
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MEDLINE
Idioma:
En
Revista:
Opt Express
Assunto da revista:
OFTALMOLOGIA
Ano de publicação:
2014
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Article