Enhanced Thermoelectric Properties in the Counter-Doped SnTe System with Strained Endotaxial SrTe.
J Am Chem Soc
; 138(7): 2366-73, 2016 Feb 24.
Article
em En
| MEDLINE
| ID: mdl-26871965
ABSTRACT
We report enhanced thermoelectric performance in SnTe, where significantly improved electrical transport properties and reduced thermal conductivity were achieved simultaneously. The former was obtained from a larger hole Seebeck coefficient through Fermi level tuning by optimizing the carrier concentration with Ga, In, Bi, and Sb dopants, resulting in a power factor of 21 µW cm(-1) K(-2) and ZT of 0.9 at 823 K in Sn(0.97)Bi(0.03)Te. To reduce the lattice thermal conductivity without deteriorating the hole carrier mobility in Sn(0.97)Bi(0.03)Te, SrTe was chosen as the second phase to create strained endotaxial nanostructures as phonon scattering centers. As a result, the lattice thermal conductivity decreases strongly from â¼2.0 Wm(-1) K(-1) for Sn(0.97)Bi(0.03)Te to â¼1.2 Wm(-1) K(-1) as the SrTe content is increased from 0 to 5.0% at room temperature and from â¼1.1 to â¼0.70 Wm(-1) K(-1) at 823 K. For the Sn(0.97)Bi(0.03)Te-3% SrTe sample, this leads to a ZT of 1.2 at 823 K and a high average ZT (for SnTe) of 0.7 in the temperature range of 300-823 K, suggesting that SnTe is a robust candidate for medium-temperature thermoelectric applications.
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Coleções:
01-internacional
Base de dados:
MEDLINE
Idioma:
En
Revista:
J Am Chem Soc
Ano de publicação:
2016
Tipo de documento:
Article
País de afiliação:
China