Increased Photoconductivity Lifetime in GaAs Nanowires by Controlled n-Type and p-Type Doping.

Boland, Jessica L; Casadei, Alberto; Tütüncüoglu, Gözde; Matteini, Federico; Davies, Christopher L; Jabeen, Fauzia; Joyce, Hannah J; Herz, Laura M; Fontcuberta I Morral, Anna; Johnston, Michael B

Boland, Jessica L; Casadei, Alberto; Tütüncüoglu, Gözde; Matteini, Federico; Davies, Christopher L; Jabeen, Fauzia; Joyce, Hannah J; Herz, Laura M; Fontcuberta I Morral, Anna; Johnston, Michael B.

Afiliação

Boland JL; Clarendon Laboratory, Department of Physics, University of Oxford , Parks Road, Oxford, OX1 3PU, United Kingdom.
Davies CL; Clarendon Laboratory, Department of Physics, University of Oxford , Parks Road, Oxford, OX1 3PU, United Kingdom.
Joyce HJ; Department of Engineering, University of Cambridge , 9 JJ Thomson Avenue, Cambridge CB3 0FA, United Kingdom.
Herz LM; Clarendon Laboratory, Department of Physics, University of Oxford , Parks Road, Oxford, OX1 3PU, United Kingdom.
Johnston MB; Clarendon Laboratory, Department of Physics, University of Oxford , Parks Road, Oxford, OX1 3PU, United Kingdom.

ACS Nano ; 10(4): 4219-27, 2016 04 26.

Article em En | MEDLINE | ID: mdl-26959350

Palavras-chave

GaAs; carrier lifetime; mobility; n-type doping; nanowires; p-type doping; photoconductivity; surface recombination; surface states; terahertz spectroscopy

Texto completo

Imprimir

XML

PubMed Links

Buscar no Google

Texto completo: 1 Coleções: 01-internacional Base de dados: MEDLINE Idioma: En Revista: ACS Nano Ano de publicação: 2016 Tipo de documento: Article País de afiliação: Reino Unido

Texto completo

Imprimir

XML

PubMed Links

Buscar no Google