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Piezo Voltage Controlled Planar Hall Effect Devices.
Zhang, Bao; Meng, Kang-Kang; Yang, Mei-Yin; Edmonds, K W; Zhang, Hao; Cai, Kai-Ming; Sheng, Yu; Zhang, Nan; Ji, Yang; Zhao, Jian-Hua; Zheng, Hou-Zhi; Wang, Kai-You.
Afiliação
  • Zhang B; SKLSM, Institute of Semiconductors, CAS, P. O. Box 912, Beijing 100083, People's Republic of China.
  • Meng KK; School of Materials Science and Engineering, University of Science and Technology Beijing, Beijing 100048, China.
  • Yang MY; SKLSM, Institute of Semiconductors, CAS, P. O. Box 912, Beijing 100083, People's Republic of China.
  • Edmonds KW; School of Physics and Astronomy, University of Nottingham, Nottingham NG7 2RD, United Kingdom.
  • Zhang H; SKLSM, Institute of Semiconductors, CAS, P. O. Box 912, Beijing 100083, People's Republic of China.
  • Cai KM; SKLSM, Institute of Semiconductors, CAS, P. O. Box 912, Beijing 100083, People's Republic of China.
  • Sheng Y; SKLSM, Institute of Semiconductors, CAS, P. O. Box 912, Beijing 100083, People's Republic of China.
  • Zhang N; Department of Physics, School of Sciences, University of Science &Technology Beijing, Beijing 100048, China.
  • Ji Y; SKLSM, Institute of Semiconductors, CAS, P. O. Box 912, Beijing 100083, People's Republic of China.
  • Zhao JH; SKLSM, Institute of Semiconductors, CAS, P. O. Box 912, Beijing 100083, People's Republic of China.
  • Zheng HZ; SKLSM, Institute of Semiconductors, CAS, P. O. Box 912, Beijing 100083, People's Republic of China.
  • Wang KY; SKLSM, Institute of Semiconductors, CAS, P. O. Box 912, Beijing 100083, People's Republic of China.
Sci Rep ; 6: 28458, 2016 06 22.
Article em En | MEDLINE | ID: mdl-27329068
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Texto completo: 1 Coleções: 01-internacional Base de dados: MEDLINE Idioma: En Revista: Sci Rep Ano de publicação: 2016 Tipo de documento: Article
Texto completo
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XML
PubMed Links
Buscar no Google

Texto completo: 1 Coleções: 01-internacional Base de dados: MEDLINE Idioma: En Revista: Sci Rep Ano de publicação: 2016 Tipo de documento: Article