Field-Effect Device Using Quasi-Two-Dimensional Electron Gas in Mass-Producible Atomic-Layer-Deposited Al2O3/TiO2 Ultrathin (<10 nm) Film Heterostructures.
ACS Nano
; 12(10): 10403-10409, 2018 Oct 23.
Article
em En
| MEDLINE
| ID: mdl-30204410
ABSTRACT
We report the field-effect transistors using quasi-two-dimensional electron gas generated at an ultrathin (â¼10 nm) Al2O3/TiO2 heterostructure interface grown via atomic layer deposition (ALD) on a SiO2/Si substrate without using a single crystal substrate. The 2DEG at the Al2O3/TiO2 interface originates from oxygen vacancies generated at the surface of the TiO2 bottom layer during ALD of the Al2O3 overlayer. High-density electrons (â¼1014 cm-2) are confined within a â¼2.2 nm distance from the Al2O3/TiO2 interface, resulting in a high on-current of â¼12 µA/µm. The ultrathin TiO2 bottom layer is easy to fully deplete, allowing an extremely low off-current, a high on/off current ratio over 108, and a low subthreshold swing of â¼100 mV/decade. Via the implementation of ALD, a mature thin-film process can facilitate mass production as well as three-dimensional integration of the devices.
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Coleções:
01-internacional
Base de dados:
MEDLINE
Idioma:
En
Revista:
ACS Nano
Ano de publicação:
2018
Tipo de documento:
Article