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In Situ Back-Contact Passivation Improves Photovoltage and Fill Factor in Perovskite Solar Cells.
Tan, Furui; Tan, Hairen; Saidaminov, Makhsud I; Wei, Mingyang; Liu, Mengxia; Mei, Anyi; Li, Peicheng; Zhang, Bowen; Tan, Chih-Shan; Gong, Xiwen; Zhao, Yongbiao; Kirmani, Ahmad R; Huang, Ziru; Fan, James Z; Quintero-Bermudez, Rafael; Kim, Junghwan; Zhao, Yicheng; Voznyy, Oleksandr; Gao, Yueyue; Zhang, Feng; Richter, Lee J; Lu, Zheng-Hong; Zhang, Weifeng; Sargent, Edward H.
Afiliação
  • Tan F; Department of Electrical and Computer Engineering, University of Toronto, Toronto, Ontario, M5S 3G4, Canada.
  • Tan H; Key Laboratory of Photovoltaic Materials, Department of Physics and Electronics, Henan University, Kaifeng, Henan, 475004, China.
  • Saidaminov MI; Department of Electrical and Computer Engineering, University of Toronto, Toronto, Ontario, M5S 3G4, Canada.
  • Wei M; National Laboratory of Solid State Microstructures, Jiangsu Key Laboratory of Artificial Functional Materials, College of Engineering and Applied Sciences, Nanjing University, Nanjing, 210093, China.
  • Liu M; Department of Electrical and Computer Engineering, University of Toronto, Toronto, Ontario, M5S 3G4, Canada.
  • Mei A; Department of Electrical and Computer Engineering, University of Toronto, Toronto, Ontario, M5S 3G4, Canada.
  • Li P; Department of Electrical and Computer Engineering, University of Toronto, Toronto, Ontario, M5S 3G4, Canada.
  • Zhang B; Department of Electrical and Computer Engineering, University of Toronto, Toronto, Ontario, M5S 3G4, Canada.
  • Tan CS; Department of Materials Science and Engineering, University of Toronto, 184 College Street, Toronto, Ontario, M5S 3E4, Canada.
  • Gong X; Key Laboratory of Photovoltaic Materials, Department of Physics and Electronics, Henan University, Kaifeng, Henan, 475004, China.
  • Zhao Y; Department of Electrical and Computer Engineering, University of Toronto, Toronto, Ontario, M5S 3G4, Canada.
  • Kirmani AR; Department of Electrical and Computer Engineering, University of Toronto, Toronto, Ontario, M5S 3G4, Canada.
  • Huang Z; Department of Electrical and Computer Engineering, University of Toronto, Toronto, Ontario, M5S 3G4, Canada.
  • Fan JZ; Materials Science and Engineering Division, National Institute of Standards and Technology (NIST), Gaithersburg, MD, 20899, USA.
  • Quintero-Bermudez R; Department of Electrical and Computer Engineering, University of Toronto, Toronto, Ontario, M5S 3G4, Canada.
  • Kim J; Department of Electrical and Computer Engineering, University of Toronto, Toronto, Ontario, M5S 3G4, Canada.
  • Zhao Y; Department of Electrical and Computer Engineering, University of Toronto, Toronto, Ontario, M5S 3G4, Canada.
  • Voznyy O; Department of Electrical and Computer Engineering, University of Toronto, Toronto, Ontario, M5S 3G4, Canada.
  • Gao Y; Department of Electrical and Computer Engineering, University of Toronto, Toronto, Ontario, M5S 3G4, Canada.
  • Zhang F; Department of Materials Science and Engineering, University of Toronto, 184 College Street, Toronto, Ontario, M5S 3E4, Canada.
  • Richter LJ; Department of Electrical and Computer Engineering, University of Toronto, Toronto, Ontario, M5S 3G4, Canada.
  • Lu ZH; Key Laboratory of Photovoltaic Materials, Department of Physics and Electronics, Henan University, Kaifeng, Henan, 475004, China.
  • Zhang W; Key Laboratory of Photovoltaic Materials, Department of Physics and Electronics, Henan University, Kaifeng, Henan, 475004, China.
  • Sargent EH; Materials Science and Engineering Division, National Institute of Standards and Technology (NIST), Gaithersburg, MD, 20899, USA.
Adv Mater ; 31(14): e1807435, 2019 Apr.
Article em En | MEDLINE | ID: mdl-30740780
ABSTRACT
Organic-inorganic hybrid perovskite solar cells (PSCs) have seen a rapid rise in power conversion efficiencies in recent years; however, they still suffer from interfacial recombination and charge extraction losses at interfaces between the perovskite absorber and the charge-transport layers. Here, in situ back-contact passivation (BCP) that reduces interfacial and extraction losses between the perovskite absorber and the hole transport layer (HTL) is reported. A thin layer of nondoped semiconducting polymer at the perovskite/HTL interface is introduced and it is shown that the use of the semiconductor polymer permits-in contrast with previously studied insulator-based passivants-the use of a relatively thick passivating layer. It is shown that a flat-band alignment between the perovskite and polymer passivation layers achieves a high photovoltage and fill factor the resultant BCP enables a photovoltage of 1.15 V and a fill factor of 83% in 1.53 eV bandgap PSCs, leading to an efficiency of 21.6% in planar solar cells.
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Texto completo: 1 Coleções: 01-internacional Base de dados: MEDLINE Idioma: En Revista: Adv Mater Assunto da revista: BIOFISICA / QUIMICA Ano de publicação: 2019 Tipo de documento: Article País de afiliação: Canadá
Texto completo
Imprimir
XML
PubMed Links
Buscar no Google

Texto completo: 1 Coleções: 01-internacional Base de dados: MEDLINE Idioma: En Revista: Adv Mater Assunto da revista: BIOFISICA / QUIMICA Ano de publicação: 2019 Tipo de documento: Article País de afiliação: Canadá