Effect of localized helium ion irradiation on the performance of synthetic monolayer MoS<sub>2</sub> field-effect transistors.

Jadwiszczak, Jakub; Maguire, Pierce; Cullen, Conor P; Duesberg, Georg S; Zhang, Hongzhou

Effect of localized helium ion irradiation on the performance of synthetic monolayer MoS₂ field-effect transistors.

Jadwiszczak, Jakub; Maguire, Pierce; Cullen, Conor P; Duesberg, Georg S; Zhang, Hongzhou.

Afiliação

Jadwiszczak J; School of Physics, Trinity College Dublin, Dublin 2, Ireland.
Maguire P; School of Physics, Trinity College Dublin, Dublin 2, Ireland.
Cullen CP; School of Chemistry, Trinity College Dublin, Dublin 2, Ireland.
Duesberg GS; School of Chemistry, Trinity College Dublin, Dublin 2, Ireland.
Zhang H; State Institute of Physics, EIT 2, Faculty of Electrical Engineering and Information Technology, Universität der Bundeswehr München, Werner-Heisenberg-Weg 39, 85577 Neubiberg, Germany.

Beilstein J Nanotechnol ; 11: 1329-1335, 2020.

Article em En | MEDLINE | ID: mdl-32953377

Palavras-chave

2D materials; contacts; defect engineering; helium ion microscope; ion beam doping; two-dimensional materials; vacancies

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Texto completo: 1 Coleções: 01-internacional Base de dados: MEDLINE Idioma: En Revista: Beilstein J Nanotechnol Ano de publicação: 2020 Tipo de documento: Article País de afiliação: Irlanda

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