Low-loss and ultra-broadband silicon nitride angled MMI polarization splitter/combiner.
Opt Express
; 28(23): 34111-34122, 2020 Nov 09.
Article
em En
| MEDLINE
| ID: mdl-33182888
ABSTRACT
The property of self-imaging combined with the polarization birefringence of the angled multimode waveguide is used to design a silicon nitride (SiN) polarization splitter (PS) at λ â¼ 1550 nm. The demonstrated PS on a 450 nm thick SiN device layer (with 2.5 µm cladding oxide) has a footprint of 80 µm×13 µm and exhibits nearly wavelength independent performance over the C+L bands. Also, the device can be configured as a polarization combiner (PC) in reverse direction with similar bandwidth and performance. The measured crosstalk (CT) and insertion loss (IL) are respectively <-18 dB (<-20 dB) and â¼0.7 dB (â¼0.8 dB) for TE (TM) polarization over the measurement wavelength range of 1525 nm ≤λ ≤ 1625 nm. The measured device parameter variations suggest some tolerance to fabrication variations. Such a device is a good candidate for a photonics integrated chip (PIC) foundry-compatible, SiN PS.
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01-internacional
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MEDLINE
Idioma:
En
Revista:
Opt Express
Assunto da revista:
OFTALMOLOGIA
Ano de publicação:
2020
Tipo de documento:
Article