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Enhancement of ferroelectricity and homogeneity of orthorhombic phase in Hf0.5Zr0.5O2thin films.
Zou, Zhengmiao; Tian, Guo; Wang, Dao; Zhang, Yan; Wang, Jiali; Li, Yushan; Tao, Ruiqiang; Fan, Zhen; Chen, Deyang; Zeng, Min; Gao, Xingsen; Dai, Ji-Yan; Lu, Xubing; Liu, J-M.
Afiliação
  • Zou Z; Guangdong Provincial Key Laboratory of Quantum Engineering and Quantum Materials and Institute for Advanced Materials, South China Academy of Advanced Optoelectronics, South China Normal University, Guangzhou 510006, People's Republic of China.
  • Tian G; Guangdong Provincial Key Laboratory of Quantum Engineering and Quantum Materials and Institute for Advanced Materials, South China Academy of Advanced Optoelectronics, South China Normal University, Guangzhou 510006, People's Republic of China.
  • Wang D; Guangdong Provincial Key Laboratory of Quantum Engineering and Quantum Materials and Institute for Advanced Materials, South China Academy of Advanced Optoelectronics, South China Normal University, Guangzhou 510006, People's Republic of China.
  • Zhang Y; Guangdong Provincial Key Laboratory of Quantum Engineering and Quantum Materials and Institute for Advanced Materials, South China Academy of Advanced Optoelectronics, South China Normal University, Guangzhou 510006, People's Republic of China.
  • Wang J; Guangdong Provincial Key Laboratory of Quantum Engineering and Quantum Materials and Institute for Advanced Materials, South China Academy of Advanced Optoelectronics, South China Normal University, Guangzhou 510006, People's Republic of China.
  • Li Y; Guangdong Provincial Key Laboratory of Quantum Engineering and Quantum Materials and Institute for Advanced Materials, South China Academy of Advanced Optoelectronics, South China Normal University, Guangzhou 510006, People's Republic of China.
  • Tao R; Guangdong Provincial Key Laboratory of Quantum Engineering and Quantum Materials and Institute for Advanced Materials, South China Academy of Advanced Optoelectronics, South China Normal University, Guangzhou 510006, People's Republic of China.
  • Fan Z; Guangdong Provincial Key Laboratory of Quantum Engineering and Quantum Materials and Institute for Advanced Materials, South China Academy of Advanced Optoelectronics, South China Normal University, Guangzhou 510006, People's Republic of China.
  • Chen D; Guangdong Provincial Key Laboratory of Quantum Engineering and Quantum Materials and Institute for Advanced Materials, South China Academy of Advanced Optoelectronics, South China Normal University, Guangzhou 510006, People's Republic of China.
  • Zeng M; Department of Applied Physics, The Hong Kong Polytechnic University, Hong Kong, People's Republic of China.
  • Gao X; Guangdong Provincial Key Laboratory of Quantum Engineering and Quantum Materials and Institute for Advanced Materials, South China Academy of Advanced Optoelectronics, South China Normal University, Guangzhou 510006, People's Republic of China.
  • Dai JY; Guangdong Provincial Key Laboratory of Quantum Engineering and Quantum Materials and Institute for Advanced Materials, South China Academy of Advanced Optoelectronics, South China Normal University, Guangzhou 510006, People's Republic of China.
  • Lu X; Department of Applied Physics, The Hong Kong Polytechnic University, Hong Kong, People's Republic of China.
  • Liu JM; Guangdong Provincial Key Laboratory of Quantum Engineering and Quantum Materials and Institute for Advanced Materials, South China Academy of Advanced Optoelectronics, South China Normal University, Guangzhou 510006, People's Republic of China.
Nanotechnology ; 32(33)2021 May 26.
Article em En | MEDLINE | ID: mdl-33910189
ABSTRACT
By adoption of a high permittivity ZrO2capping layer (ZOCL), enhanced ferroelectric properties were achieved in the Hf0.5Zr0.5O2(HZO) thin films. For HZO thin film with 10 Å ZOCL, the 2Prvalue can reach as high as ∼43.1µC cm-2under a sweep electric field of 3 MV cm-1. In addition, a reduced coercive field of 1.5 MV cm-1was observed, which is comparable to that of HZO with metallic CL. Furthermore, the homogeneity of ferroelectric orthorhombic phase in HZO films was observed to be clearly increased, as evidenced by nanoscale piezoelectric force microscopy measurements. These results demonstrate that ZOCL is very favorable for high performance ferroelectric HZO films and their future device applications.
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Texto completo: 1 Coleções: 01-internacional Base de dados: MEDLINE Idioma: En Revista: Nanotechnology Ano de publicação: 2021 Tipo de documento: Article
Texto completo
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PubMed Links
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Texto completo: 1 Coleções: 01-internacional Base de dados: MEDLINE Idioma: En Revista: Nanotechnology Ano de publicação: 2021 Tipo de documento: Article