The interaction between vacancy defects in gallium sulfide monolayer and a new vacancy defect model.

Zhang, Tao; Liang, Ying; Guo, Hao; Zhang, Tian C; Fan, Haidong; Tian, Xiaobao

Zhang, Tao; Liang, Ying; Guo, Hao; Zhang, Tian C; Fan, Haidong; Tian, Xiaobao.

Afiliação

Zhang T; MOE Key Laboratory of Deep Earth Science and Engineering, College of Architecture and Environment, Sichuan University, Chengdu 610065, China. xbtian@scu.edu.cn and College of Architecture & Environment, Sichuan University, Chengdu, Sichuan 610065, China.
Liang Y; MOE Key Laboratory of Deep Earth Science and Engineering, College of Architecture and Environment, Sichuan University, Chengdu 610065, China. xbtian@scu.edu.cn and College of Architecture & Environment, Sichuan University, Chengdu, Sichuan 610065, China.
Guo H; College of Architecture & Environment, Sichuan University, Chengdu, Sichuan 610065, China.
Zhang TC; Civil & Environmental Engineering Department, University of Nebraska-Lincoln, Omaha, NE 68182-0178, USA.
Fan H; College of Architecture & Environment, Sichuan University, Chengdu, Sichuan 610065, China.
Tian X; MOE Key Laboratory of Deep Earth Science and Engineering, College of Architecture and Environment, Sichuan University, Chengdu 610065, China. xbtian@scu.edu.cn and College of Architecture & Environment, Sichuan University, Chengdu, Sichuan 610065, China.

Phys Chem Chem Phys ; 23(24): 13623-13632, 2021 Jun 23.

Article em En | MEDLINE | ID: mdl-34115084

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Texto completo: 1 Coleções: 01-internacional Base de dados: MEDLINE Idioma: En Revista: Phys Chem Chem Phys Assunto da revista: BIOFISICA / QUIMICA Ano de publicação: 2021 Tipo de documento: Article País de afiliação: China

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