Memristive Characteristics of the Single-Layer P-Type CuAlO<sub>2</sub> and N-Type ZnO Memristors.

Song, Wenqing; Li, Xinmiao; Fang, Ruihua; Zhang, Lei

Memristive Characteristics of the Single-Layer P-Type CuAlO₂ and N-Type ZnO Memristors.

Song, Wenqing; Li, Xinmiao; Fang, Ruihua; Zhang, Lei.

Afiliação

Song W; State Key Laboratory of High Performance Complex Manufacturing, College of Mechanical and Electrical Engineering, Central South University, Changsha 410083, China.
Li X; School of Intelligent Manufacturing and Mechanical Engineering, Hunan Institute of Technology, Hengyang 421002, China.
Fang R; State Key Laboratory of High Performance Complex Manufacturing, College of Mechanical and Electrical Engineering, Central South University, Changsha 410083, China.
Zhang L; State Key Laboratory of High Performance Complex Manufacturing, College of Mechanical and Electrical Engineering, Central South University, Changsha 410083, China.

Materials (Basel) ; 15(10)2022 May 19.

Article em En | MEDLINE | ID: mdl-35629662

Palavras-chave

NiO; ZnO; memristors; oxygen ion migration; single-layer

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Texto completo: 1 Coleções: 01-internacional Base de dados: MEDLINE Tipo de estudo: Prognostic_studies Idioma: En Revista: Materials (Basel) Ano de publicação: 2022 Tipo de documento: Article País de afiliação: China

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