High-Fidelity Ion State Detection Using Trap-Integrated Avalanche Photodiodes.
Phys Rev Lett
; 129(10): 100502, 2022 Sep 02.
Article
em En
| MEDLINE
| ID: mdl-36112432
ABSTRACT
Integrated technologies greatly enhance the prospects for practical quantum information processing and sensing devices based on trapped ions. High-speed and high-fidelity ion state readout is critical for any such application. Integrated detectors offer significant advantages for system portability and can also greatly facilitate parallel operations if a separate detector can be incorporated at each ion-trapping location. Here, we demonstrate ion quantum state detection at room temperature utilizing single-photon avalanche diodes (SPADs) integrated directly into the substrate of silicon ion trapping chips. We detect the state of a trapped Sr^{+} ion via fluorescence collection with the SPAD, achieving 99.92(1)% average fidelity in 450 µs, opening the door to the application of integrated state detection to quantum computing and sensing utilizing arrays of trapped ions.
Texto completo:
1
Coleções:
01-internacional
Base de dados:
MEDLINE
Tipo de estudo:
Diagnostic_studies
Idioma:
En
Revista:
Phys Rev Lett
Ano de publicação:
2022
Tipo de documento:
Article
País de afiliação:
Estados Unidos