Very Low-Efficiency Droop in 293 nm AlGaN-Based Light-Emitting Diodes Featuring a Subtly Designed p-Type Layer.

Lai, Mu-Jen; Chang, Yi-Tsung; Wang, Shu-Chang; Huang, Shiang-Fu; Liu, Rui-Sen; Zhang, Xiong; Chen, Lung-Chien; Lin, Ray-Ming

Lai, Mu-Jen; Chang, Yi-Tsung; Wang, Shu-Chang; Huang, Shiang-Fu; Liu, Rui-Sen; Zhang, Xiong; Chen, Lung-Chien; Lin, Ray-Ming.

Afiliação

Lai MJ; Jiangxi Yuhongjin Material Technology Co., Ltd., Fuzhou 344100, China.
Chang YT; Department of Physics, School of Science, Jimei University, Xiamen 361021, China.
Wang SC; Changshu Institute of Technology, College of Electronics and Information Engineering, Changshu 215500, China.
Huang SF; Department of Otolaryngology-Head and Neck Surgery, Chang Gung Memorial Hospital, Taoyuan 33302, Taiwan.
Liu RS; Department of Public Health, Chang Gung University, Taoyuan 33302, Taiwan.
Zhang X; Guangdong Institute of Semiconductor Micro-Nano Manufacturing Technology, Foshan 528200, China.
Chen LC; Advanced Photonics Center, School of Electronic Science and Engineering, Southeast University, Nanjing 210096, China.
Lin RM; Department of Electro-Optical Engineering, National Taipei University of Technology, Taipei 10608, Taiwan.

Molecules ; 27(21)2022 Nov 05.

Article em En | MEDLINE | ID: mdl-36364421

Assuntos

Gálio; Semicondutores; Compostos de Alumínio

Palavras-chave

AlGaN; MOCVD; efficiency droop; external quantum efficiency; light-emitting diode

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Texto completo: 1 Coleções: 01-internacional Base de dados: MEDLINE Assunto principal: Semicondutores / Gálio Idioma: En Revista: Molecules Assunto da revista: BIOLOGIA Ano de publicação: 2022 Tipo de documento: Article País de afiliação: China

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