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The Doping Effect on the Intrinsic Ferroelectricity in Hafnium Oxide-Based Nano-Ferroelectric Devices.
Li, Zhenhai; Wei, Jinchen; Meng, Jialin; Liu, Yongkai; Yu, Jiajie; Wang, Tianyu; Xu, Kangli; Liu, Pei; Zhu, Hao; Chen, Shiyou; Sun, Qing-Qing; Zhang, David Wei; Chen, Lin.
Afiliação
  • Li Z; School of Microelectronics, Fudan University, Shanghai 200433, P. R. China.
  • Wei J; Zhangjiang Fudan International Innovation Center, Shanghai 201203, P. R. China.
  • Meng J; School of Microelectronics, Fudan University, Shanghai 200433, P. R. China.
  • Liu Y; School of Microelectronics, Fudan University, Shanghai 200433, P. R. China.
  • Yu J; Zhangjiang Fudan International Innovation Center, Shanghai 201203, P. R. China.
  • Wang T; School of Microelectronics, Fudan University, Shanghai 200433, P. R. China.
  • Xu K; Zhangjiang Fudan International Innovation Center, Shanghai 201203, P. R. China.
  • Liu P; School of Microelectronics, Fudan University, Shanghai 200433, P. R. China.
  • Zhu H; Zhangjiang Fudan International Innovation Center, Shanghai 201203, P. R. China.
  • Chen S; School of Microelectronics, Fudan University, Shanghai 200433, P. R. China.
  • Sun QQ; Zhangjiang Fudan International Innovation Center, Shanghai 201203, P. R. China.
  • Zhang DW; School of Microelectronics, Fudan University, Shanghai 200433, P. R. China.
  • Chen L; Zhangjiang Fudan International Innovation Center, Shanghai 201203, P. R. China.
Nano Lett ; 23(10): 4675-4682, 2023 May 24.
Article em En | MEDLINE | ID: mdl-36913490

Texto completo: 1 Coleções: 01-internacional Base de dados: MEDLINE Idioma: En Revista: Nano Lett Ano de publicação: 2023 Tipo de documento: Article

Texto completo: 1 Coleções: 01-internacional Base de dados: MEDLINE Idioma: En Revista: Nano Lett Ano de publicação: 2023 Tipo de documento: Article