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Giant Out-of-Plane Exciton Emission Enhancement in Two-Dimensional Indium Selenide via a Plasmonic Nanocavity.
Bao, Xiaotian; Wu, Xianxin; Ke, Yuxuan; Wu, Keming; Jiang, Chuanxiu; Wu, Bo; Li, Jing; Yue, Shuai; Zhang, Shuai; Shi, Jianwei; Du, Wenna; Zhong, Yangguang; Hu, Huatian; Bai, Peng; Gong, Yiyang; Zhang, Qing; Zhang, Wenkai; Liu, Xinfeng.
Afiliação
  • Bao X; Department of Physics and Applied Optics Beijing Area Major Laboratory, Center for Advanced Quantum Studies, Beijing Normal University, Beijing 100875, People's Republic of China.
  • Wu X; CAS Key Laboratory of Standardization and Measurement for Nanotechnology, National Center for Nanoscience and Technology, Beijing 100190, People's Republic of China.
  • Ke Y; CAS Key Laboratory of Standardization and Measurement for Nanotechnology, National Center for Nanoscience and Technology, Beijing 100190, People's Republic of China.
  • Wu K; University of Chinese Academy of Sciences, Beijing 100049, People's Republic of China.
  • Jiang C; School of Materials Science and Engineering, Peking University, Beijing 100871, People's Republic of China.
  • Wu B; CAS Key Laboratory of Standardization and Measurement for Nanotechnology, National Center for Nanoscience and Technology, Beijing 100190, People's Republic of China.
  • Li J; CAS Key Laboratory of Standardization and Measurement for Nanotechnology, National Center for Nanoscience and Technology, Beijing 100190, People's Republic of China.
  • Yue S; University of Chinese Academy of Sciences, Beijing 100049, People's Republic of China.
  • Zhang S; Guangdong Provincial Key Laboratory of Optical Information Materials and Technology & Institute of Electronic Paper Displays, South China Academy of Advanced Optoelectronics, South China Normal University, Guangzhou 510006, People's Republic of China.
  • Shi J; Key Laboratory of Photochemical Conversion and Optoelectronic Materials, Technical Institute of Physics and Chemistry, Chinese Academy of Sciences, Beijing 100190, People's Republic of China.
  • Du W; CAS Key Laboratory of Standardization and Measurement for Nanotechnology, National Center for Nanoscience and Technology, Beijing 100190, People's Republic of China.
  • Zhong Y; University of Chinese Academy of Sciences, Beijing 100049, People's Republic of China.
  • Hu H; CAS Key Laboratory of Standardization and Measurement for Nanotechnology, National Center for Nanoscience and Technology, Beijing 100190, People's Republic of China.
  • Bai P; University of Chinese Academy of Sciences, Beijing 100049, People's Republic of China.
  • Gong Y; CAS Key Laboratory of Standardization and Measurement for Nanotechnology, National Center for Nanoscience and Technology, Beijing 100190, People's Republic of China.
  • Zhang Q; University of Chinese Academy of Sciences, Beijing 100049, People's Republic of China.
  • Zhang W; CAS Key Laboratory of Standardization and Measurement for Nanotechnology, National Center for Nanoscience and Technology, Beijing 100190, People's Republic of China.
  • Liu X; University of Chinese Academy of Sciences, Beijing 100049, People's Republic of China.
Nano Lett ; 23(9): 3716-3723, 2023 May 10.
Article em En | MEDLINE | ID: mdl-37125916
Out-of-plane (OP) exciton-based emitters in two-dimensional semiconductor materials are attractive candidates for novel photonic applications, such as radially polarized sources, integrated photonic chips, and quantum communications. However, their low quantum efficiency resulting from forbidden transitions limits their practicality. In this work, we achieve a giant enhancement of up to 34000 for OP exciton emission in indium selenide (InSe) via a designed Ag nanocube-over-Au film plasmonic nanocavity. The large photoluminescence enhancement factor (PLEF) is attributed to the induced OP local electric field (Ez) within the nanocavity, which facilitates effective OP exciton-plasmon interaction and subsequent tremendous enhancement. Moreover, the nanoantenna effect resulting from the effective interaction improves the directivity of spontaneous radiation. Our results not only reveal an effective photoluminescence enhancement approach for OP excitons but also present an avenue for designing on-chip photonic devices with an OP dipole orientation.
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Texto completo: 1 Coleções: 01-internacional Base de dados: MEDLINE Tipo de estudo: Guideline Idioma: En Revista: Nano Lett Ano de publicação: 2023 Tipo de documento: Article

Texto completo: 1 Coleções: 01-internacional Base de dados: MEDLINE Tipo de estudo: Guideline Idioma: En Revista: Nano Lett Ano de publicação: 2023 Tipo de documento: Article