Your browser doesn't support javascript.
loading
Effect of Noncircular Channel on Distribution of Threshold Voltage in 3D NAND Flash Memory.
Go, Donghyun; Yoon, Gilsang; Park, Jounghun; Kim, Donghwi; Kim, Jiwon; Kim, Jungsik; Lee, Jeong-Soo.
Afiliação
  • Go D; Department of Electrical Engineering, Pohang University of Science and Technology, Pohang 37673, Republic of Korea.
  • Yoon G; Department of Electrical Engineering, Pohang University of Science and Technology, Pohang 37673, Republic of Korea.
  • Park J; Department of Electrical Engineering, Pohang University of Science and Technology, Pohang 37673, Republic of Korea.
  • Kim D; Department of Electrical Engineering, Pohang University of Science and Technology, Pohang 37673, Republic of Korea.
  • Kim J; Department of Electrical Engineering, Pohang University of Science and Technology, Pohang 37673, Republic of Korea.
  • Kim J; Department of Electrical Engineering, Gyeongsang National University, Jinju 52828, Republic of Korea.
  • Lee JS; Department of Electrical Engineering, Pohang University of Science and Technology, Pohang 37673, Republic of Korea.
Micromachines (Basel) ; 14(11)2023 Oct 28.
Article em En | MEDLINE | ID: mdl-38004865
Palavras-chave
Texto completo
Imprimir
XML
PubMed Links
Buscar no Google

Texto completo: 1 Coleções: 01-internacional Base de dados: MEDLINE Idioma: En Revista: Micromachines (Basel) Ano de publicação: 2023 Tipo de documento: Article
Texto completo
Imprimir
XML
PubMed Links
Buscar no Google

Texto completo: 1 Coleções: 01-internacional Base de dados: MEDLINE Idioma: En Revista: Micromachines (Basel) Ano de publicação: 2023 Tipo de documento: Article