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Spin-based magnetic random-access memory for high-performance computing.
Cai, Kaiming; Jin, Tianli; Lew, Wen Siang.
Afiliação
  • Cai K; School of Physics, Huazhong University of Science and Technology, China.
  • Jin T; Interuniversity Microelectronics Centre (IMEC), Belgium.
  • Lew WS; School of Physical and Mathematical Sciences, Nanyang Technological University, Singapore.
Natl Sci Rev ; 11(3): nwad272, 2024 Mar.
Article em En | MEDLINE | ID: mdl-38312380
ABSTRACT
Spin-based memory technology is now available as embedded magnetic random access memory (eMRAM) for fast, high-density and non-volatile memory products, which can significantly boost computing performance and ignite the development of new computing architectures.

Texto completo: 1 Coleções: 01-internacional Base de dados: MEDLINE Tipo de estudo: Clinical_trials Idioma: En Revista: Natl Sci Rev Ano de publicação: 2024 Tipo de documento: Article País de afiliação: China

Texto completo: 1 Coleções: 01-internacional Base de dados: MEDLINE Tipo de estudo: Clinical_trials Idioma: En Revista: Natl Sci Rev Ano de publicação: 2024 Tipo de documento: Article País de afiliação: China