Identification of the molecular subtype and prognostic characteristics of pancreatic cancer based on CD8 + T cell-related genes.

CD8 + T lymphocytes are immune cells that play a crucial anti-tumor role in the human body, and prognostic value of CD8 + T cell-related regulatory genes in PAAD remains elusive. Data on 179 expression profiles across 13 immune cell datasets were downloaded from the GEO database, and the expression profiles of CD8 + T cell-related genes were obtained using WGCNA. Molecular subtypes based on CD8 + T cell-related genes were constructed using the ConsensusClusterPlus algorithm. Lasso regression analysis was performed to build a 10-gene signature. GSVA was performed to explore the pathways related to these ten genes. The IMvigor210 cohort was used to explore the predictive efficacy of the signature in terms of immunotherapy response. Four hundred and forty-six CD8 + T cell-related genes were obtained. One hundred and nine genes in TCGA and GEO datasets were closely related to the prognosis of patients and were included in the next study. PAAD samples were divided into two subtypes (IC1 and IC2) according to consensus cluster analysis. These two immune subtypes were significantly different in terms of immune checkpoint genes, immune function, and drug treatment response. Additionally, the 10-gene signature constructed based on CD8 + T cell-related genes showed a stable prognostic performance in TCGA and GEO cohorts. Moreover, it served as an independent prognostic factor for patients with PAAD. Furthermore, the 10-gene signature could effectively predict the response to immunotherapy. The immunophenotyping-derived prognostic model based on CD8 T cell-related genes provides a basis for the clinical treatment of pancreatic cancer.

Tuning spin-orbit coupling and realizing inverse persistent spin helix by an extra above-barrier radiation in a GaAs/Al0.3Ga0.7As heterostructure.

A persistent spin helix with equal strength of the Rashba and Dresselhaus spin-orbit coupling (SOC) is expected for future spintronic devices due to the suppression of spin relaxation. In this work we investigate the optical tuning of the Rashba and Dresselhaus SOC by monitoring the spin-galvanic effect (SGE) in a GaAs/Al0.3Ga0.7As two dimensional electron gas. An extra control light above the bandgap of the barrier is introduced to tune the SGE excited by a circularly polarized light below the bandgap of GaAs. We observe different tunability of the Rashba- and Dresselhaus-related SGE currents and extract the ratio of the Rashba and Dresselhaus coefficients. It decreases monotonously with the power of the control light and reaches a particular value of ∼-1, implying the formation of the inverse persistent spin helix state. By analyzing the optical tuning process phenomenologically and microscopically, we reveal greater optical tunability of the Rashba SOC than that of the Dresselhaus SOC.

Giant photoinduced inverse spin Hall effect of the surface states in three dimensional topological insulators Bi2Te3 with different thickness.

The photoinduced inverse spin Hall effect (PISHE) has been studied in three dimensional (3D) topological insulator (TI) Bi2Te3 thin films with different thicknesses (3, 5, 12 and 20 quintuple layer (QL)). The sign of the PISHE current flips only once in the 3- and 20-QL Bi2Te3 films, but it flips three times in the 5-, 7- and 12-QL samples. The three-times sign flip is due to the superposition of the PISHE current of the top and bottom surface states in Bi2Te3 films. By analyzing the x-ray photoelectron spectroscopy (XPS) of the Bi2Te3 films, we find that the top surface of the 3- and 20-QL Bi2Te3 films are severely oxidized, leading to only one sign flip in the PISHE. The PISHE contributed by the top and bottom surface states in Bi2Te3 films have been successfully separated by fitting a theoretical model to the PISHE current. The impact of the bulk states on PISHE current has been determined. The PISHE current is also measured at different light powers, and all the measurement results are in good agreement with the theoretical model. In addition, it is found that the PISHE current in Bi2Te3 films grown on Si substrate is more than two orders larger than that grown on SrTiO3 substrates, which can be attributed to the larger absorption coefficient for Bi2Te3/Si samples. It is revealed that the PISHE current in 3D TI Bi2Te3 is as large as 140 nA/W in the 3-QL Bi2Te3 film grown on Si substrate, which is more than one order larger than that reported in GaAs/AlGaAs heterojunction (about 2 nA/W) and GaN/AlGaN heterojunction (about 1.7 nA/W). The giant PISHE current demonstrates that the TIs with strong SOC may have good application prospects in spintronic devices with high spin-to-charge conversion efficiency.

Current-Induced Spin Photocurrent in GaAs at Room Temperature.

Circularly polarized photocurrent, observed in p-doped bulk GaAs, varies nonlinearly with the applied bias voltage at room temperature. It has been explored that this phenomenon arises from the current-induced spin polarization in GaAs. In addition, we found that the current-induced spin polarization direction of p-doped bulk GaAs grown in the (001) direction lies in the sample plane and is perpendicular to the applied electric field, which is the same as that in GaAs quantum well. This research indicates that circularly polarized photocurrent is a new optical approach to investigate the current-induced spin polarization at room temperature.

Identification and clinical validation of EMT-associated prognostic features based on hepatocellular carcinoma.

BACKGROUND: The aim of this study was to construct a model based on the prognostic features associated with epithelial-mesenchymal transition (EMT) to explore the various mechanisms and therapeutic strategies available for the treatment of metastasis and invasion by hepatocellular carcinoma (HCC) cells. METHODS: EMT-associated genes were identified, and their molecular subtypes were determined by consistent clustering analysis. The differentially expressed genes (DEGs) among the molecular subtypes were ascertained using the limma package and they were subjected to functional enrichment analysis. The immune cell scores of the molecular subtypes were evaluated using ESTIMATE, MCPcounter, and GSCA packages of R. A multi-gene prognostic model was constructed using lasso regression, and the immunotherapeutic effects of the model were analyzed using the Imvigor210 cohort. In addition, immunohistochemical analysis was performed on a cohort of HCC tissue to validate gene expression. RESULTS: Based on the 59 EMT-associated genes identified, the 365-liver hepatocellular carcinoma (LIHC) samples were divided into two subtypes, C1 and C2. The C1 subtype mostly showed poor prognosis, had higher immune scores compared to the C2 subtype, and showed greater correlation with pathways of tumor progression. A four-gene signature construct was fabricated based on the 1130 DEGs among the subtypes. The construct was highly robust and showed stable predictive efficacy when validated using datasets from different platforms (HCCDB18 and GSE14520). Additionally, compared to currently existing models, our model demonstrated better performance. The results of the immunotherapy cohort showed that patients in the low-risk group have a better immune response, leading to a better patient's prognosis. Immunohistochemical analysis revealed that the expression levels of the FTCD, PON1, and TMEM45A were significantly over-expressed in 41 normal samples compared to HCC samples, while that of the G6PD was significantly over-expressed in cancerous tissues. CONCLUSIONS: The four-gene signature construct fabricated based on the EMT-associated genes provides valuable information to further study the pathogenesis and clinical management of HCC.

Inverse spin Hall effect induced by linearly polarized light in the topological insulator Bi2Se3.

The inverse spin Hall effect (ISHE) induced by the normal incidence of linearly-polarized infrared radiation has been observed in the topological insulator Bi2Se3. A model has been proposed to explain the phenomenon, and the spin transverse force has been determined by the model fitting. The anomalous linear photogalvanic effect (ALPGE) is also observed, and the photoinduced momentum anisotropy is extracted. Furthermore, the ISHE and ALPGE are investigated at different temperatures between 77 and 300 K, and the temperature dependence of the spin transverse force and photoinduced momentum anisotropy are obtained. This study suggests a new way to investigate the inverse spin Hall effect via linearly polarized light even at room temperature.

Photoinduced Inverse Spin Hall Effect of Surface States in the Topological Insulator Bi2Se3.

The three-dimensional (3D) topological insulator (TI) Bi2Se3 exhibits topologically protected, linearly dispersing Dirac surface states (SSs). To access the intriguing properties of these SSs, it is important to distinguish them from the coexisting two-dimensional electron gas (2DEG) on the surface. Here, we use circularly polarized light to induce the inverse spin Hall effect in a Bi2Se3 thin film at different temperatures (i.e., from 77 to 300 K). It is demonstrated that the photoinduced inverse spin Hall effect (PISHE) of the top SSs and the 2DEG can be separated based on their opposite signs. The temperature and power dependence of the PISHE also confirms our method. Furthermore, it is found that the PISHE in the 2DEG is dominated by the extrinsic mechanism, as revealed by the temperature dependence of the PISHE.

Reflectance difference spectroscopy microscope for circular defects on InN films.

Reflectance difference spectroscopy microscope (µ-RDS) is presented to characterize microstructural defects on the surface of materials. We use this microscope to study the circular defects on InN films and obtain the real normal reflectivity image and reflectance difference (RD) image by averaging the results before and after a 90° rotation of the sample. We analyze the experimental data along with other methods and formally ensure the reliability of this microscope. Comparing with the results of AFM, we prove that the reflectivity image of our µ-RDS can characterize the surface topography, size and location of the defects. We find the RD image generated by uniform height fluctuation is a standard four polar distribution in an established ideal circular defect model. However, a non-four polar distribution of RD image can be caused by the strain field as well as nonstandard height fluctuations, which is verified by simulation and Raman mapping technique. So the µ-RDS is an ideal tool for optical anisotropy distribution induced by small changes in the height and strain field around the defect boundary in plane.

Generation of Rashba spin-orbit coupling in CdSe nanowire by ionic liquid gate.

Spintronic devices rely on the spin degree of freedom (DOF), and spin orbit coupling (SOC) is the key to manipulate spin DOF. Quasi-one-dimensional structures, possessing marked anisotropy gives more choice for the manipulation of the spin DOF since the concrete SOC form varies along with crystallographic directions. The anisotropy of the Dresselhaus SOC in cadmium selenide (CdSe) nanobelt and nanowire was studied by circular photogalvanic effect. It was demonstrated that the Dresselhaus SOC parameter is zero along the [0001] crystallographic direction, which suppresses the spin relaxation and increases the spin diffusion length, and thus is beneficial to the spin manipulation. To achieve a device structure with Rashba SOC presence and Dresselhaus SOC absence for manipulating the spin DOF, an ionic liquid gate was produced on a nanowire grown along the [0001] crystallographic direction, and the Rashba SOC was induced by gating, as expected.

Temperature dependence of spin photocurrent spectra induced by Rashba- and Dresselhaus-type circular photogalvanic effect at inter-band excitation in InGaAs/AlGaAs quantum wells.

Spin photocurrent spectra induced by Rashba- and Dresselhaus-type circular photogalvanic effect (CPGE) at inter-band excitation have been experimentally investigated in InGaAs/AlGaAs quantum wells at a temperature range of 80 to 290 K. It is found that, the sign of Rashba-type current reverses at low temperatures, while that of Dresselhaus-type remains unchanged. The temperature dependence of ratio of Rashba and Dresselhaus spin-orbit coupling parameters, increasing from -6.7 to 17.9, is obtained, and the possible reasons are discussed. We also develop a model to extract the Rashba-type effective electric field at different temperatures. It is demonstrated that excitonic effect will significantly influence the Rashba-type CPGE, while it has little effect on Dresselhaus-type CPGE.

Tunable surface electron spin splitting with electric double-layer transistors based on InN.

Electrically manipulating electron spins based on Rashba spin-orbit coupling (SOC) is a key pathway for applications of spintronics and spin-based quantum computation. Two-dimensional electron systems (2DESs) offer a particularly important SOC platform, where spin polarization can be tuned with an electric field perpendicular to the 2DES. Here, by measuring the tunable circular photogalvanic effect (CPGE), we present a room-temperature electric-field-modulated spin splitting of surface electrons on InN epitaxial thin films that is a good candidate to realize spin injection. The surface band bending and resulting CPGE current are successfully modulated by ionic liquid gating within an electric double-layer transistor configuration. The clear gate voltage dependence of CPGE current indicates that the spin splitting of the surface electron accumulation layer is effectively tuned, providing a way to modulate the injected spin polarization in potential spintronic devices.

Manipulation of Helicity-Dependent Photocurrent and Stokes Parameter Detection in Topological Insulator Bi2Te3 Nanowires.

Helicity-dependent photocurrent (HDPC) and its modulation in topological insulator Bi2Te3 nanowires have been investigated. It is revealed that when the incident plane of a laser is perpendicular to the nanowire, the HDPC is an odd function of the incident angle, which is mainly contributed by the circular photogalvanic effect originating from the surface states of Bi2Te3 nanowire. When the incident plane of a laser is parallel to the nanowire, the HDPC is approximately an even function of the incident angle, which is due to the circular photon drag effect coming from the surface states. It is found that the HDPC can be effectively tuned by the back gate and the ionic liquid top gate. By analyzing the substrate dependence of the HDPC, we find that the HDPC of the Bi2Te3 nanowire on the Si substrate is an order of magnitude larger than that on SiO2, which may be due to the spin injection from the Si substrate to the Bi2Te3 nanowire. In addition, by applying different biases, the Stokes parameters of a polarized light can be extracted by arithmetic operation of the photocurrents measured in the Bi2Te3 nanowire. This work suggests that topological insulator Bi2Te3 nanowires may provide a good platform for opto-spintronic devices, especially in chirality and polarimtry detection.

Temperature dependence of anisotropic mode splitting induced by birefringence in an InGaAs/GaAs/AlGaAs vertical-cavity surface-emitting laser studied by reflectance difference spectroscopy.

The temperature dependence of the mode splitting induced by birefringence in an InGaAs/GaAs/AlGaAs vertical-cavity surface-emitting laser has been studied by reflectance difference spectroscopy at different temperatures ranging from 80 to 330 K. The anisotropic broadening width and the anisotropic integrated area of the cavity mode under different temperatures are also determined. The relation between the mode splitting and the birefringence is obtained by theoretical calculation using a Jones matrix approach. The temperature dependence of the energy position of the cavity mode and the quantum well transition are also determined by nearly normal reflectance and photoluminescence, respectively.

Electric Control of Helicity-Dependent Photocurrent and Surface Polarity Detection on Two-Dimensional Bi2O2Se Nanosheets.

Bismuth oxyselenide (Bi2O2Se) is a two-dimensional (2D) layered semiconductor material with high electron Hall mobility and excellent environmental stability as well as strong spin-orbit interaction (SOI), which has attracted intense attention for application in spintronic and spin optoelectronic devices. However, a comprehensive study of spin photocurrent and its microscopic origin in Bi2O2Se is still missing. Here, the helicity-dependent photocurrent (HDPC) was investigated in Bi2O2Se nanosheets. By analyzing the dependence of HDPC on the angle of incidence, we find that the HDPC originates from surface states with Cs symmetry in Bi2O2Se, which can be attributed to the circular photogalvanic effect (CPGE) and circular photon drag effect (CPDE). It is revealed that the HDPC current almost changes linearly with the source-drain voltage. Furthermore, we demonstrate effective tuning of HDPC in Bi2O2Se by ionic liquid gating, indicating that the spin splitting of the surface electronic structure is effectively tuned. By analyzing the gate voltage dependence of HDPC, we can unambiguously identify the surface polarity and the surface electronic structure of Bi2O2Se. The large HDPC in Bi2O2Se nanosheets and its efficient electrical tuning demonstrate that 2D Bi2O2Se nanosheets may provide a good platform for opto-spintronics devices.

Local Electric-Field-Induced Spin Photocurrent in ReS2.

A spin-related photocurrent excited by circularly polarized light is observed near the electrodes on a few-layer ReS2 sample at room temperature. For both electrodes, the spatial distribution of the spin photocurrent shows a feature of two wings, with one positive and the other negative. In this work, it is suggested that this phenomenon arises from the inverse spin Hall effect due to the local electric field near the electrode. Bias voltage that modulates this field further controls the sign and magnitude of the spin photocurrent. Our research shows that the electric field near the electrodes has a significant impact on the spin transmission operation, and hence it could be taken into account for manufacturing spintronic devices in the future.

Photorefractive effects in ZnO nanorod doped liquid crystal cell.

In a forced light scattering experiment, after the diffraction efficiency arrives to a stable state, both direct current (DC) voltage and two writing beams are turned off, and then by reapplication of the DC voltage we observed a peak. We provide an explanation based on periodically changed anchoring energy and also discuss the evolution of diffraction efficiency under different grating constants, laser polarization, and the direction of the optical axis of a liquid crystal cell. Experiment results show that photo-introduced charge density is nearly in proportion to the intensity of writing beams.

Spin splitting modulated by uniaxial stress in InAs nanowires.

We theoretically study the electronic structure, spin splitting, effective mass, and spin orientation of InAs nanowires with cylindrical symmetry in the presence of an external electric field and uniaxial stress. Using an eight-band k·p theoretical model, we deduce a formula for the spin splitting in the system, indicating that the spin splitting under uniaxial stress is a nonlinear function of the momentum and the electric field. The spin splitting can be described by a linear Rashba model when the wavevector and the electric field are sufficiently small. Our numeric results show that the uniaxial stress can modulate the spin splitting. With the increase of wavevector, the uniaxial tensile stress first restrains and then amplifies the spin splitting of the lowest electron state compared to the no strain case. The reverse is true under a compression. Moreover, strong spin splitting can be induced by compression when the top of the valence band is close to the bottom of the conductance band, and the spin orientations of the electron stay almost unchanged before the overlap of the two bands.

Stretchable graphene: a close look at fundamental parameters through biaxial straining.

Tunable biaxial stresses, both tensile and compressive, are applied to a single layer graphene by utilizing piezoelectric actuators. The Gruneisen parameters for the phonons responsible for the D, G, 2D and 2D' peaks are studied. The results show that the D peak is composed of two peaks, unambiguously revealing that the 2D peak frequency (omega(2D)) is not exactly twice that of the D peak (omega(D)). This finding is confirmed by varying the biaxial strain of the graphene, from which we observe that the shift of omega(2D)/2 and omega(D) are different. The employed technique allows a detailed study of the interplay between the graphene geometrical structures and its electronic properties.

Systematic Analysis of an Invasion-Related 3-Gene Signature and Its Validation as a Prognostic Model for Pancreatic Cancer.

BACKGROUND: Pancreatic adenocarcinoma (PAAD) is a malignant tumor of the digestive system that is associated with a poor prognosis in patients owing to its rapid progression and high invasiveness. METHODS: Ninety-seven invasive-related genes obtained from the CancerSEA database were clustered to obtain the molecular subtype of pancreatic cancer based on the RNA-sequencing (RNA-seq) data of The Cancer Genome Atlas (TCGA). The differentially expressed genes (DEGs) between subtypes were obtained using the limma package in R, and the multi-gene risk model based on DEGs was constructed by Lasso regression analysis. Independent datasets GSE57495 and GSE62452 were used to validate the prognostic value of the risk model. To further explore the expression of the hub genes, immunohistochemistry was performed on PAAD tissues obtained from a large cohort. RESULTS: The TCGA-PAAD samples were divided into two subtypes based on the expression of the invasion-related genes: C1 and C2. Most genes were overexpressed in the C1 subtype. The C1 subtype was mainly enriched in tumor-related signaling pathways, and the prognosis of patients with the C1 subtype was significantly worse than those with the C2 subtype. A 3-gene signature consisting of LY6D, BCAT1, and ITGB6 based on 538 DEGs between both subtypes serves as a stable prognostic marker in patients with pancreatic cancer across multiple cohorts. LY6D, BCAT1, and ITGB6 were over-expressed in 120 PAAD samples compared to normal samples. CONCLUSIONS: The constructed 3-gene signature can be used as a molecular marker to assess the prognostic risk in patients with PAAD.