Engineering the Structural and Electronic Phases of MoTe2 through W Substitution.

MoTe2 is an exfoliable transition metal dichalcogenide (TMD) that crystallizes in three symmetries: the semiconducting trigonal-prismatic 2H- or α-phase, the semimetallic and monoclinic 1T'- or ß-phase, and the semimetallic orthorhombic γ-structure. The 2H-phase displays a band gap of ∼1 eV making it appealing for flexible and transparent optoelectronics. The γ-phase is predicted to possess unique topological properties that might lead to topologically protected nondissipative transport channels. Recently, it was argued that it is possible to locally induce phase-transformations in TMDs, through chemical doping, local heating, or electric-field to achieve ohmic contacts or to induce useful functionalities such as electronic phase-change memory elements. The combination of semiconducting and topological elements based upon the same compound might produce a new generation of high performance, low dissipation optoelectronic elements. Here, we show that it is possible to engineer the phases of MoTe2 through W substitution by unveiling the phase-diagram of the Mo1-xWxTe2 solid solution, which displays a semiconducting to semimetallic transition as a function of x. We find that a small critical W concentration xc ∼ 8% stabilizes the γ-phase at room temperature. This suggests that crystals with x close to xc might be particularly susceptible to phase transformations induced by an external perturbation, for example, an electric field. Photoemission spectroscopy, indicates that the γ-phase possesses a Fermi surface akin to that of WTe2.

Optical parametric amplification via non-Hermitian phase matching.

We introduce the notion of dissipative optical parametric amplifiers (DOPA) and demonstrate that, even in the absence of the Hermitian phase-matching condition in these structures, the signal beam can be amplified when the idler mode suffers optical attenuation. We discuss the optical implementation of this concept in waveguide platforms, and we propose different methods to control the optical loss of these configurations only at the wavelength of the idler component. Surprisingly, this spectrally selective dissipation process allows the signal beam to draw more energy from the pump and, as a result, attains net amplification. Similar results also apply if the losses are introduced only to the signal component. This intriguing feature can open new avenues for building long wavelength light sources and parametric amplifiers by using semiconductor planar structures, where Hermitian phase-matching requirements can be difficult to satisfy without adding stringent geometric constraints or relatively complex fabrication steps.

Nonequilibrium band mapping of unoccupied bulk states below the vacuum level by two-photon photoemission.

We demonstrate angle-resolved, tunable, two-photon photoemission (2PPE) to map a bulk unoccupied band, viz. the Cu sp band 0 to 1 eV below the vacuum level, in the vicinity of the L point. This short-lived bulk band is seen due to the strong optical pump rate, and the observed transition energies and their dispersion with photon energy ℏω, are in excellent agreement with tight-binding band-structure calculations. The variation of the final-state energy with ℏω has a measured slope of ∼1.64 in contrast to values of 1 or 2 observed for 2PPE from two-dimensional states. This unique variation illustrates the significant role of the perpendicular momentum ℏk_{⊥} in 2PPE.

Nonlinear-optical phase modification in dispersion-engineered Si photonic wires.

The strong dispersion and large third-order nonlinearity in Si photonic wires are intimately linked in the optical physics needed for the optical control of phase. By carefully choosing the waveguide dimensions, both linear and nonlinear optical properties of Si wires can be engineered. In this paper we provide a review of the control of phase using nonlinear-optical effects such as self-phase and cross-phase modulation in dispersion-engineered Si wires. The low threshold powers for phase-changing effects in Si-wires make them potential candidates for functional nonlinear optical devices of just a few millimeters in length.

Two-photon absorption in diamond and its application to ultraviolet femtosecond pulse-width measurement.

Intensity-dependent transmission measurements of 310-nm femtosecond pulses show that diamond has a twophoton absorption coefficient of 0.75 +/- 0.15 cm/GW, in approximate agreement with universal scaling formulas for two-photon absorption in diamond-structure materials. We then demonstrate that two-photon absorption is strong enough to permit simple measurements of ultraviolet femtosecond pulse widths in single-crystal diamond plates that are thin enough (250 microm) to be both inexpensive and dispersion free. Autocorrelation measurements of 10-50-nJ, 0.18-1.4-ps pulses are presented. The method requires no phase matching and can be applied to pulses in the wavelength range of 220-550 nm.

Femtosecond carrier-induced screening of dc electric-field-induced second-harmonic generation at the Si(001) SiO(2) interface.

Carrier-induced screening of the dc electric field at the Si(001)-SiO(2) interface is observed by intensity-dependent and femtosecond-time-resolved second-harmonic spectroscopy. The screening occurs on a time scale of ~?(p)(-1) , the reciprocal plasma frequency of the generated carriers.

Measurement of the vector character of electric fields by optical second-harmonic generation.

We present a scheme for the determination of the vector nature of an electric field by optical second-harmonic generation. We demonstrate the technique by mapping the two-dimensional electric-field vector of a biased transmission line structure on silicon with a spatial resolution of ~10mum .