Tuning the Morphology of Solution-Sheared P3HT:PCBM Films.

Organic bulk heterojunction (BHJ) solar cells are a promising alternative for future clean-energy applications. However, to become attractive for consumer applications, such as wearable, flexible, or semitransparent power-generating electronics, they need to be manufactured by high-throughput, low-cost, large-area-capable printing techniques. However, most research reported on BHJ solar cells is conducted using spin coating, a single batch fabrication method, thus limiting the reported results to the research lab. In this work, we investigate the morphology of solution-sheared films for BHJ solar cell applications, using the widely studied model blend P3HT:PCBM. Solution shearing is a coating technique that is upscalable to industrial manufacturing processes and has demonstrated to yield record performance organic field-effect transistors. Using grazing incident small-angle X-ray scattering, grazing incident wide-angle X-ray scattering, and UV-vis spectroscopy, we investigate the influence of solvent, film drying time, and substrate temperature on P3HT aggregation, conjugation length, crystallite orientation, and PCBM domain size. One important finding of this study is that, in contrast to spin-coated films, the P3HT molecular orientation can be controlled by the substrate chemistry, with PEDOT: PSS substrates yielding face-on orientation at the substrate-film interface, an orientation highly favorable for organic solar cells.

Surpassing the Exciton Diffusion Limit in Single-Walled Carbon Nanotube Sensitized Solar Cells.

Semiconducting single-walled carbon nanotube (s-SWNT) light sensitized devices, such as infrared photodetectors and solar cells, have recently been widely reported. Despite their excellent individual electrical properties, efficient carrier transport from one carbon nanotube to another remains a fundamental challenge. Specifically, photovoltaic devices with active layers made from s-SWNTs have suffered from low efficiencies caused by three main challenges: the overwhelming presence of high-bandgap polymers in the films, the weak bandgap offset between the LUMO of the s-SWNTs and the acceptor C60, and the limited exciton diffusion length from one SWNT to another of around 5 nm that limits the carrier extraction efficiency. Herein, we employ a combination of processing and device architecture design strategies to address each of these transport challenges and fabricate photovoltaic devices with s-SWNT films well beyond the exciton diffusion limit of 5 nm. While our solution processing method minimizes the presence of undesired polymers in our active films, our interfacial designs led to a significant increase in current generation with the addition of a highly doped C60 layer (n-doped C60), resulting in increased carrier separation efficiency from the s-SWNTs films. We create a dense interconnected nanoporous mesh of s-SWNTs using solution shearing and infiltrate it with the acceptor C60. Thus, our final engineered bulk heterojunction allows carriers from deep within to be extracted by the C60 registering a 10-fold improvement in performance from our preliminary structures.