An in-situ approach for preparing atom probe tomography specimens by xenon plasma-focussed ion beam.

A method for the rapid preparation of atom probe tomography (APT) needles using a xenon plasma-focussed ion beam (FIB) instrument is presented and demonstrated on a test sample of Ti-6Al-4V alloy. The method requires significantly less operator input than the standard lift-out protocol, is site-specific and produces needles with minimal ion-beam damage; electron microscopy indicated the needle's surface amorphised/oxidised region to be less than 2 nm thick. The resulting needles were routinely analysable by APT, confirming the expected microstructure and showing negligible Xe contamination.

Weak antilocalization of high mobility holes in a strained germanium quantum well heterostructure.

We present the observation of weak antilocalization due to the Rashba spin-orbit interaction, through magnetoresistance measurements performed at low temperatures and low magnetic fields on a high mobility (777,000 cm(2) V(-1) s(-1)) p-Ge/SiGe quantum well heterostructure. The measured magnetoresistance over a temperature range of 0.44 to 11.2 K shows an apparent transition from weak localization to weak antilocalization. The temperature dependence of the zero field conductance correction is indicative of weak localization using the simplest model, despite the clear existence of weak antilocalization. The Rashba interaction present in this material, and the absence of the un-tuneable Dresselhaus interaction, indicates that Ge quantum well heterostructures are highly suitable for semiconductor spintronic applications, particularly the proposed spin field effect transistor.