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1.
Opt Lett ; 44(12): 3014-3017, 2019 Jun 15.
Artigo em Inglês | MEDLINE | ID: mdl-31199369

RESUMO

A gold-coated silicon grating has been developed, enabling efficient spatial separation of broadband mid-infrared (MIR) beams with wavelengths >5 µm from collinearly propagating, broadband, high-power light in the near-infrared (NIR) spectral range (centered at 2 µm). The optic provides spectral filtering at high powers in a thermally robust and chromatic-dispersion-free manner such as that necessary for coherent MIR radiation sources based on parametric frequency downconversion of femtosecond NIR lasers. The suppression of a >20 W average-power, 2 µm driving pulse train by three orders of magnitude, while retaining high reflectivity of the broadband MIR beam, is presented.

2.
Opt Express ; 26(21): 28104-28118, 2018 Oct 15.
Artigo em Inglês | MEDLINE | ID: mdl-30469866

RESUMO

Diffuse scattering of optical one-dimensional gratings becomes increasingly critical as it constrains the performance, e.g., of grating spectrometers. In particular, stochastic disturbances of the ideal grating structure provoke straylight. In this paper, the straylight spectrum of stochastically disturbed gratings is examined. First, a 1D-method is presented that allows to calculate 2D-diffuse scattering of arbitrarily polarized light originating from stochastic disturbances of the grating geometry on the basis of standard optical simulation tools. Within the scope of this method an enormous reduction of computational effort is achieved compared to the full 2D-simulation approach, i.e., the computation time can be reduced by several orders of magnitude. Hence, the method also allows to address even large period gratings that are not possible to calculate within a full 2D-approach. In analogy to scattering theories for surface roughness the method relies on typical characteristics of straylight originating from small disturbances, that the angle resolved scattering (ARS) can be separated into a product of the power spectral density describing the 2D stochastic process and additional factors depending on the undisturbed 1D grating structure. In a second part, an analytical model within Fourier optics utilizing thin element approximation (TEA) describing the wide angle scattering of lamellar gratings disturbed by line edge roughness (LER) for TE-polarized light is derived and verified by applying the 1D-simulation method. For shallow gratings, we find an excellent agreement between simulation and TEA over the whole transmission half space. In addition, this model allows a descriptive understanding of the underlying physical effects and, accordingly, the influence of relevant parameters (grating geometry, refractive indices, illumination) onto the scattering spectra is discussed. Further, it is shown that LER-scattering can be described within a modified Rayleigh-Rice-ARS usually found within the frame of surface roughness.

3.
Opt Express ; 26(15): 19534-19547, 2018 Jul 23.
Artigo em Inglês | MEDLINE | ID: mdl-30114124

RESUMO

High-performance nano-optical elements for application wavelengths in the ultraviolet spectral range often require feature sizes of only a few tens of nanometers where line edge roughness (LER) becomes a critical parameter for the optical performance. In this contribution, we explore the influence of LER on the optical performance of wire grid polarizers (WGP) in the far ultraviolet range. Therefore, we present a method, which uses the finite difference time domain method in combination with a comprehensive spatial frequency dependent LER model. The measured LER of 3.6 nm (standard deviation) reduces the WGP's extinction ratio by a factor of 3.6 at a wavelength of 248 nm. We identify a critical range of the correlation length, which maximizes the detrimental effect of LER. The presented method and the results provide the basis for future fabrication technology optimization of WGPs and other optical meta-surfaces in the ultraviolet spectral region or at even shorter wavelengths.

4.
Opt Express ; 25(6): 6182-6191, 2017 Mar 20.
Artigo em Inglês | MEDLINE | ID: mdl-28380972

RESUMO

In this paper we report different methods to improve the stray light performance of binary spectrometer gratings fabricated by electron beam lithography. In particular, we report the optimization concerns about spurious stray light peaks, also known as "Rowland ghosts". As already known these Rowland ghosts arise from a non-optimized stitching process of special subareas needed in order to fabricate large area gratings. One approach to reduce the impact of the stitching errors is the technique of "multi-pass-exposure" (MPE). Furthermore, the potential of a direct improvement of the stitching accuracy via special calibration parameters is examined. In both cases the effects on the stray light performance were determined by angle resolved scattering measurements. The achieved results show that specific calibration parameters of an e-beam writer have a strong influence on the strength of the Rowland ghosts and that their recalibration combined with an adapted writing regime reduces the peaks significantly.

5.
Opt Express ; 20 Suppl 6: A856-63, 2012 Nov 05.
Artigo em Inglês | MEDLINE | ID: mdl-23187662

RESUMO

The temperature dependent optical parameters n and k of amorphous silicon deposited by electron beam evaporation were determined at the wavelength of 808 nm. This was achieved by fitting an optical model of the layer system to reflection values of a fs-laser beam. From n(T) and k(T) the absorption of a-Si layers as depending on thickness and temperature were calculated for this diode laser wavelength. By heating the layers to 600 °C the absorption can be increased by a factor of 4 as compared to room temperature, which allows for diode laser crystallization of layers down to 80 nm in thickness.

6.
Opt Express ; 20(23): A856-63, 2012 Nov 05.
Artigo em Inglês | MEDLINE | ID: mdl-23326833

RESUMO

The temperature dependent optical parameters n and k of amorphous silicon deposited by electron beam evaporation were determined at the wavelength of 808 nm. This was achieved by fitting an optical model of the layer system to reflection values of a fs-laser beam. From n(T) and k(T) the absorption of a-Si layers as depending on thickness and temperature were calculated for this diode laser wavelength. By heating the layers to 600 °C the absorption can be increased by a factor of 4 as compared to room temperature, which allows for diode laser crystallization of layers down to 80 nm in thickness.

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