1.
Phys Rev Lett
; 84(13): 2877-80, 2000 Mar 27.
Artigo
em Inglês
| MEDLINE
| ID: mdl-11018965
RESUMO
We have observed the dependence of the scanning tunneling microscopy (STM) imaged atom intensity within the (7x7) unit cell on stepped Si(111) as a function of the tunneling voltage. Pronounced differences from the corresponding atom intensity on the flat surface are observed for the contrast of atoms on the low versus the high side of the step and for the contrast between the faulted versus unfaulted subcells of the (7x7) structure. These differences can be accounted for by changes in the electronic structure within the (7x7) subcells adjacent to the step. Calculations of the local density of states and the STM images using a tight-binding method are in excellent agreement with the experimental results.
2.
Phys Rev B Condens Matter
; 45(22): 12806-12811, 1992 Jun 01.
Artigo
em Inglês
| MEDLINE
| ID: mdl-10001340
3.
Phys Rev B Condens Matter
; 40(11): 7532-7536, 1989 Oct 15.
Artigo
em Inglês
| MEDLINE
| ID: mdl-9991178
4.
Phys Rev B Condens Matter
; 45(3): 1159-1162, 1992 Jan 15.
Artigo
em Inglês
| MEDLINE
| ID: mdl-10001589
5.
Phys Rev B Condens Matter
; 45(12): 6839-6843, 1992 Mar 15.
Artigo
em Inglês
| MEDLINE
| ID: mdl-10000446
6.
Phys Rev B Condens Matter
; 46(15): 9677-9682, 1992 Oct 15.
Artigo
em Inglês
| MEDLINE
| ID: mdl-10002778