Performance and characterization of the FinEstBeAMS beamline at the MAX IV Laboratory.

FinEstBeAMS (Finnish-Estonian Beamline for Atmospheric and Materials Sciences) is a multidisciplinary beamline constructed at the 1.5 GeV storage ring of the MAX IV synchrotron facility in Lund, Sweden. The beamline covers an extremely wide photon energy range, 4.5-1300 eV, by utilizing a single elliptically polarizing undulator as a radiation source and a single grazing-incidence plane grating monochromator to disperse the radiation. At photon energies below 70 eV the beamline operation relies on the use of optical and thin-film filters to remove higher-order components from the monochromated radiation. This paper discusses the performance of the beamline, examining such characteristics as the quality of the gratings, photon energy calibration, photon energy resolution, available photon flux, polarization quality and focal spot size.

Metallic Contact between MoS2 and Ni via Au Nanoglue.

A critical factor for electronics based on inorganic layered crystals stems from the electrical contact mode between the semiconducting crystals and the metal counterparts in the electric circuit. Here, a materials tailoring strategy via nanocomposite decoration is carried out to reach metallic contact between MoS2 matrix and transition metal nanoparticles. Nickel nanoparticles (NiNPs) are successfully joined to the sides of a layered MoS2 crystal through gold nanobuffers, forming semiconducting and magnetic NiNPs@MoS2 complexes. The intrinsic semiconducting property of MoS2 remains unchanged, and it can be lowered to only few layers. Chemical bonding of the Ni to the MoS2 host is verified by synchrotron radiation based photoemission electron microscopy, and further proved by first-principles calculations. Following the system's band alignment, new electron migration channels between metal and the semiconducting side contribute to the metallic contact mechanism, while semiconductor-metal heterojunctions enhance the photocatalytic ability.

Annealing Effect on Structural, Optical and Electrophysical Properties of ZnSe Nanocrystals Synthesized into SiO2/Si Ion Track Template.

We report the results of synthesis of zinc selenide (ZnSe) nanocrystals into SiO2/Si track templates formed by irradiation with 200 MeV Xe ions up to a fluence of 107 ions/cm2. Zinc selenide nanocrystals were obtained by chemical deposition from the alkaline aqueous solution. Scanning electron microscopy, X-ray diffractometry, Raman and photoluminescence spectroscopy, and electrical measurements were used for characterization of synthesized ZnSe/SiO2nanoporous/Si nanocomposites. XRD data for as-deposited precipitates revealed the formation of ZnSe nanocrystals with cubic crystal structure, spatial syngony F-43m (216). According to non-empirical calculations using GGA-PBE and HSE06 functionals, ZnSe crystal is a direct-zone crystal with a minimum bandgap width of 2.36 eV and anisotropic electronic distribution. It was found that a thermal treatment of synthesized nanocomposites at 800 °C results in an increase in ZnSe nanocrystallites size as well as an increase in emission intensity of created precipitates in a broad UV-VIS spectra range. However, vacuum conditions of annealing still do not completely prevent the oxidation of zinc selenide, and a formation of hexagonal ZnO phase is registered in the annealed samples. The current-voltage characteristics of the synthesized nanocomposites proved to have n-type conductivity, as well as increased conductivity after annealing.

Advanced Synthesis and Characterization of CdO/CdS/ZnO Heterostructures for Solar Energy Applications.

This study introduces an innovative method for synthesizing Cadmium Oxide /Cadmium Sulfide/Zinc Oxide heterostructures (CdO/CdS/ZnO), emphasizing their potential application in solar energy. Utilizing a combination of electrochemical deposition and oxygen annealing, the research provides a thorough analysis of the heterostructures through scanning electron microscopy (SEM), energy-dispersive X-ray (EDX) spectroscopy, X-ray diffraction (XRD), Raman spectroscopy, and photoluminescence (PL) spectroscopy. The findings reveal a complex surface morphology and a composite structure with significant contributions from hexagonal CdS and cubic CdO phases. The study highlights the uniformity in the distribution of luminescent centers and the crystalline quality of the heterostructures, which is evident from the PL analysis. The redshift observed in the emission peak and the additional peaks in the excitation spectrum indicate intricate optical properties influenced by various factors, including quantum confinement and lattice strain. The research demonstrates these heterostructures' potential in enhancing solar cells' efficiency and applicability in optoelectronic devices. This comprehensive characterization and analysis pave the way for future optimization and application in efficient and sustainable solar energy solutions.

Flexible nanosheets for plasmonic photocatalysis: microwave-assisted organic synthesis of Ni-NiO@Ni2CO3(OH)2 core-shell@sheet hybrid nanostructures.

Visible light-active nickel-based plasmonic photocatalysts provide a cost-effective alternative to noble metals. However, their rarity, fragility, and limited understanding pose challenges. This work presents a microwave-assisted organic synthesis of a Ni-NiO@Ni2CO3(OH)2 core-shell@sheet plasmonic photocatalyst. By employing time and power dependent synthesis, this catalyst exhibits flexible Ni2CO3(OH)2 nanosheets enveloping the Ni-NiO structure, surpassing the pristine Ni@NiO/NiCO3 core-shell counterpart. Chemical reaction mechanisms suggest that irradiation of pristine Ni-NiO/NiCO3 nano structures leads to breakage of amorphous NiCO3 to Ni2+ and CO32-, which further, in the presence of water solvent, interacts with OH- ions leading to the formation of Ni(CO3)·Ni(OH)2. With enhanced light absorption and photocatalytic properties, the resulting core-shell@sheet photocatalyst demonstrates double the hydrogen evolution reaction yield (40 µmol g-1 h-1) compared to the pristine catalyst (20 µmol g-1 h-1). The enhanced H2 yield is attributed to the flexible sheets, cross-dimensional photocatalyst structure, increased surface area for surface reactions, and higher H2 activity of Ni2CO3(OH)2. This research showcases the potential of microwave-assisted synthesis in developing flexible nanosheets with superior solar water splitting performance.

Study of the Effect of Two Phases in Li4SiO4-Li2SiO3 Ceramics on the Strength and Thermophysical Parameters.

The paper studies the effect of Li2SiO3/Li4SiO4 phase formation in lithium-containing ceramics on the strength and thermophysical characteristics of lithium-containing ceramics, which have great prospects for use as blanket materials for tritium propagation. During the phase composition analysis of the studied ceramics using the X-ray diffraction method, it was found that an increase in the lithium component during synthesis leads to the formation of an additional orthorhombic Li2SiO3 phase, and the main phase in ceramics is the monoclinic Li4SiO4 phase. An analysis of the morphological features of the synthesized ceramics showed that an increase in the Li2SiO3 impurity phase leads to ceramic densification and the formation of impurity grains near grain boundaries and joints. During determination of the strength characteristics of the studied ceramics, a positive effect of an increase in the Li2SiO3 impurity phase and dimensional factors on the strengthening and increase in the resistance to external influences during compression of ceramics was established. During tests for resistance to long-term thermal heating, it was found that for two-phase ceramics, the decrease in strength and thermophysical characteristics after 500 h of annealing was less than 5%, which indicates a high resistance and stability of these ceramics in comparison with single-phase orthosilicate ceramics.

Vacancy Defects in Ga2O3: First-Principles Calculations of Electronic Structure.

First-principles density functional theory (DFT) is employed to study the electronic structure of oxygen and gallium vacancies in monoclinic bulk ß-Ga2O3 crystals. Hybrid exchange-correlation functional B3LYP within the density functional theory and supercell approach were successfully used to simulate isolated point defects in ß-Ga2O3. Based on the results of our calculations, we predict that an oxygen vacancy in ß-Ga2O3 is a deep donor defect which cannot be an effective source of electrons and, thus, is not responsible for n-type conductivity in ß-Ga2O3. On the other hand, all types of charge states of gallium vacancies are sufficiently deep acceptors with transition levels more than 1.5 eV above the valence band of the crystal. Due to high formation energy of above 10 eV, they cannot be considered as a source of p-type conductivity in ß-Ga2O3.

First Principles Calculations of Atomic and Electronic Structure of TiAl3+- and TiAl2+-Doped YAlO3.

In this paper, the density functional theory accompanied with linear combination of atomic orbitals (LCAO) method is applied to study the atomic and electronic structure of the Ti3+ and Ti2+ ions substituted for the host Al atom in orthorhombic Pbnm bulk YAlO3 crystals. The disordered crystalline structure of YAlO3 was modelled in a large supercell containing 160 atoms, allowing simulation of a substitutional dopant with a concentration of about 3%. In the case of the Ti2+-doped YAlO3, compensated F-center (oxygen vacancy with two trapped electrons) is inserted close to the Ti to make the unit cell neutral. Changes of the interatomic distances and angles between the chemical bonds in the defect-containing lattices were analyzed and quantified. The positions of various defect levels in the host band gap were determined.

Band Gap Engineering and Trap Depths of Intrinsic Point Defects in RAlO3 (R = Y, La, Gd, Yb, Lu) Perovskites.

The possibility of band gap engineering (BGE) in RAlO3 (R = Y, La, Gd, Yb, Lu) perovskites in the context of trap depths of intrinsic point defects was investigated comprehensively using experimental and theoretical approaches. The optical band gap of the materials, E g, was determined via both the absorption measurements in the VUV spectral range and the spectra of recombination luminescence excitation by synchrotron radiation. The experimentally observed effect of E g reduction from ∼8.5 to ∼5.5 eV in RAlO3 perovskites with increasing R3+ ionic radius was confirmed by the DFT electronic structure calculations performed for RMIIIO3 crystals (R = Lu, Y, La; MIII = Al, Ga, In). The possibility of BGE was also proved by the analysis of thermally stimulated luminescence (TSL) measured above room temperature for the far-red emitting (Y/Gd/La)AlO3:Mn4+ phosphors, which confirmed decreasing of the trap depths in the cation sequence Y → Gd → La. Calculations of the trap depths performed within the super cell approach for a number of intrinsic point defects and their complexes allowed recognizing specific trapping centers that can be responsible for the observed TSL. In particular, the electron traps of 1.33 and 1.43 eV (in YAlO3) were considered to be formed by the energy level of oxygen vacancy (VO) with different arrangement of neighboring YAl and VY, while shallower electron traps of 0.9-1.0 eV were related to the energy level of YAl antisite complexes with neighboring VO or (VO + VY). The effect of the lowering of electron trap depths in RAlO3 was demonstrated for the VO-related level of the (YAl + VO + VY) complex defect for the particular case of La substituting Y.

Time-resolved luminescence and excitation spectroscopy of Co-doped Gd3Ga3Al2O12 scintillating crystals.

Cerium doped Gd3Ga3Al2O12 (GGAG) single crystals as well as GGAG:Ce single crystals co-doped by divalent (Mg2+, Ca2+) and tetravalent (Zr4+, Ti4+) ions have been studied by means of time-resolved luminescence as well as the excitation luminescence spectroscopy in vacuum ultraviolet (VUV) and soft X-ray (XUV) spectral range. Tunable laser excitation was applied for time-resolved experiments in order to obtain luminescence decay curves under excitations in Ce3+, Gd3+ and excitonic absorption bands. The influence of the co-dopant ions on the Ce3+ luminescence decay kinetics is elucidated. The fastest luminescence decay was observed for the Mg2+ co-doped crystals under any excitation below bandgap energy indicating the perturbation of the 5d states of Ce3+ by Mg2+ ions. Synchrotron radiation was utilized for the luminescence excitation in the energy range from 4.5 to 800 eV. Special attention was paid to the analysis of Ce3+ excitation spectra in VUV and XUV spectral range where multiplication of electronic excitation (MEE) processes occur. Our results demonstrated that GGAG:Ce single crystals co-doped by Mg2+ ions as well as the GGAG:Ce crystal annealed in vacuum reveal the most efficient excitation of Ce3+ emission in VUV-XUV excitation range. The role of intrinsic defects in MEE processes in the co-doped as well as in the annealed GGAG:Ce single crystals is discussed.