Micro-Scale Device-An Alternative Route for Studying the Intrinsic Properties of Solid-State Materials: The Case of Semiconducting TaGeIr.

An efficient application of a material is only possible if we know its physical and chemical properties, which is frequently obstructed by the presence of micro- or macroscopic inclusions of secondary phases. While sometimes a sophisticated synthesis route can address this issue, often obtaining pure material is not possible. One example is TaGeIr, which has highly sample-dependent properties resulting from the presence of several impurity phases, which influence electronic transport in the material. The effect of these minority phases was avoided by manufacturing, with the help of focused-ion-beam, a µm-scale device containing only one phase-TaGeIr. This work provides evidence for intrinsic semiconducting behavior of TaGeIr and serves as an example of selective single-domain device manufacturing. This approach gives a unique access to the properties of compounds that cannot be synthesized in single-phase form, sparing costly and time-consuming synthesis efforts.

EuTM(2)Ga(8) (TM = Co, Rh, Ir) - a contribution to the chemistry of the CeFe(2)Al(8)-type compounds.

The isostructural compounds EuTM(2)Ga(8) (TM = Co, Rh, Ir) were prepared by direct reaction of the elements by high-frequency thermal treatment. All three phases are isotypic with CeFe(2)Al(8) (space group Pbam, Pearson symbol oP44, Z = 4). The crystal structure was established from single-crystal X-ray diffraction data: a = 12.4322(7) A, b = 14.3814(9) A, and c = 4.0378(2) A for EuCo(2)Ga(8); a = 12.6001(6) A, b = 14.6757(7) A, and c = 4.1172(2) A for EuRh(2)Ga(8); and a = 12.6237(7) A, b = 14.6978(8) A, and c = 4.1486(2) A for EuIr(2)Ga(8), respectively. Analysis of the chemical bonding in EuRh(2)Ga(8) with the electron localizability tools reveals formation of the 3D [Rh(2)Ga(8)] polyanion build by polar covalent bonds. Europium interacts in two ways with the polyanion: mainly as a cation by charge transfer and additionally covalently by means of the electrons of the inner shells. Magnetic susceptibility measurements show Curie-Weiss paramagnetic behavior above 40 K with effective magnetic moments of 7.81, 8.05, and 8.27 micro(B)/f.u. for EuTM(2)Ga(8) (TM = Co, Rh, Ir). Antiferromagnetic ordering of Eu moments is observed in all three compounds below 20 K. Independently on the chemical composition of the coordination sphere, magnetic behavior and, especially, X-ray absorption spectra indicate predominantly the 4f(7) electronic configuration of europium with small admixture of the 4f(6) state.

Physical properties and crystal chemistry of Ce2Ga12Pt.

Single crystals of the new ternary compound Ce(2)Ga(12)Pt were prepared by the self-flux technique. The crystal structure with the space group P4/nbm was established from single crystal x-ray diffraction data and presents a derivative of the LaGa(6)Ni(0.6) prototype. Magnetic susceptibility measurements show Curie-Weiss behaviour due to local Ce(3+) moments. At high temperatures, the magnetic anisotropy is dominated by the crystal-electric-field (CEF) effect with the easy axis along the crystallographic c direction. Ce(2)Ga(12)Pt undergoes two antiferromagnetic phase transitions at T(N,1) = 7.3 K and T(N,2) = 5.5 K and presents several metamagnetic transitions for the magnetic field along c. Specific-heat measurements prove the bulk nature of these magnetic transitions and reveal a doublet CEF ground state. The 4f contribution to the resistivity shows a broad maximum at T(max) ≈ 85 K due to Kondo scattering off the CEF ground state and excited levels.