RESUMO
Given the reflective nature of extreme ultraviolet lithography and its extremely short operational wavelength, roughness of the optical surfaces is of significant concern. In particular, roughness in the mask multilayer leads to image plane speckle and ultimately patterned line-edge or line-width variability in the imaging process. Here we consider the implications of this effect for future high numerical aperture (NA) systems that are assumed to require anamorphic magnification projection optics. The results show significant anisotropic behavior at high NA as well as a substantial increase in relative patterned line variability in the shadowed direction when comparing 0.55 NA to 0.33 NA, despite the assumption of an anamorphic magnification system. The shadowed-direction patterned line variability is 2× larger than for unshadowed lines, and the majority of the increase in variability occurs in the low frequency regime.
RESUMO
It is now well established that extreme ultraviolet (EUV) mask multilayer roughness leads to wafer-plane line-width roughness (LWR) in the lithography process. Analysis and modeling done to date has assumed, however, that the roughness leading to scatter is primarily a phase effect and that the amplitude can be ignored. Under this assumption, simple scattering measurements can be used to characterize the statistical properties of the mask roughness. Here, we explore the implications of this simplifying assumption by modeling the imaging impacts of the roughness amplitude component as a function of the balance between amplitude and phase induced scatter. In addition to model-based analysis, we also use an EUV microscope to compare experimental through focus data to modeling in order to assess the actual amount of amplitude roughness on a typical EUV multilayer mask. The results indicate that amplitude roughness accounts for less than 1% of the total scatter for typical EUV masks.