Reconfigurable Logic-in-Memory Computing Based on a Polarity-Controllable Two-Dimensional Transistor.

Logic-in-memory architecture holds great promise to meet the high-performance and energy-efficient requirements of data-intensive scenarios. Two-dimensional compacted transistors embedded with logic functions are expected to extend Moore's law toward advanced nodes. Here we demonstrate that a WSe2/h-BN/graphene based middle-floating-gate field-effect transistor can perform under diverse current levels due to the controllable polarity by the control gate, floating gate, and drain voltages. Such electrical tunable characteristics are employed for logic-in-memory architectures and can behave as reconfigurable logic functions of AND/XNOR within a single device. Compared to the conventional devices like floating-gate field-effect transistors, our design can greatly decrease the consumption of transistors. For AND/NAND, it can save 75% transistors by reducing the transistor number from 4 to 1; for XNOR/XOR, it is even up to 87.5% with the number being reduced from 8 to 1.

Fabrication and Performance of a Ta2O5 Thin Film pH Sensor Manufactured Using MEMS Processes.

In this work, a capacitive pH sensor consisting of Ta2O5 functional film is designed and fabricated by employing MEMS-based procedures. The Ta2O5 thin film has an amorphous microstructure, and its surface roughness is less than 3.17 nm. A signal processing circuit and a software filtering algorithm are also designed to measure the pH value, thus improving the detection accuracy and anti-interference ability. Good linearity (R2 = 0.99904) and sensitivity (63.12 mV/pH) are recorded for the proposed sensing element in the range of pH 2~12. In addition, the sensor's drift and hysteresis are equal to 5.1 mV and 5.8 mV, respectively. The enhanced sensing performance in combination with the facile miniaturization process, low fabrication cost, and suitability for mass production render the fabricated sensor attractive for applications where pH change measurements in a water environment are required.

Floating-Gate Manipulated Graphene-Black Phosphorus Heterojunction for Nonvolatile Ambipolar Schottky Junction Memories, Memory Inverter Circuits, and Logic Rectifiers.

The Schottky junction is an important unit in electronics and optoelectronics. However, its properties greatly degrade with device miniaturization. The fast development of circuits has fueled a rapid growth in the study of two-dimensional (2D) crystals, which may lead to breakthroughs in the semiconductor industry. Here we report a floating-gate manipulated nonvolatile ambipolar Schottky junction memory from stacked all-2D layers of graphene-BP/h-BN/graphene (BP, black phosphorus; h-BN, hexagonal boron nitride) in a designed floating-gate field-effect Schottky barrier transistor configuration. By manipulating the voltage pulse applied to the control gate, the device exhibits ambipolar characteristics and can be tuned to act as graphene-p-BP or graphene-n-BP junctions with reverse rectification behavior. Moreover, the junction exhibits good storability properties of more than 10 years and is also programmable. On the basis of these characteristics, we further demonstrate the application of the device to dual-mode nonvolatile Schottky junction memories, memory inverter circuits, and logic rectifiers.

Wrapping Aligned Carbon Nanotube Composite Sheets around Vanadium Nitride Nanowire Arrays for Asymmetric Coaxial Fiber-Shaped Supercapacitors with Ultrahigh Energy Density.

The emergence of fiber-shaped supercapacitors (FSSs) has led to a revolution in portable and wearable electronic devices. However, obtaining high energy density FSSs for practical applications is still a key challenge. This article exhibits a facile and effective approach to directly grow well-aligned three-dimensional vanadium nitride (VN) nanowire arrays (NWAs) on carbon nanotube (CNT) fiber with an ultrahigh specific capacitance of 715 mF/cm2 in a three-electrode system. Benefiting from their intriguing structural features, we successfully fabricated a prototype asymmetric coaxial FSS (ACFSS) with a maximum operating voltage of 1.8 V. From core to shell, this ACFSS consists of a CNT fiber core coated with VN@C NWAs as the negative electrode, Na2SO4 poly(vinyl alcohol) (PVA) as the solid electrolyte, and MnO2/conducting polymer/CNT sheets as the positive electrode. The novel coaxial architecture not only fully enables utilization of the effective surface area and decreases the contact resistance between the two electrodes but also, more importantly, provides a short pathway for the ultrafast transport of axial electrons and ions. The electrochemical results show that the optimized ACFSS exhibits a remarkable specific capacitance of 213.5 mF/cm2 and an exceptional energy density of 96.07 µWh/cm2, the highest areal capacitance and areal energy density yet reported in FSSs. Furthermore, the device possesses excellent flexibility in that its capacitance retention reaches 96.8% after bending 5000 times, which further allows it to be woven into flexible electronic clothes with conventional weaving techniques. Therefore, the asymmetric coaxial architectural design allows new opportunities to fabricate high-performance flexible FSSs for future portable and wearable electronic devices.

Constructing Ultrahigh-Capacity Zinc-Nickel-Cobalt Oxide@Ni(OH)2 Core-Shell Nanowire Arrays for High-Performance Coaxial Fiber-Shaped Asymmetric Supercapacitors.

Increased efforts have recently been devoted to developing high-energy-density flexible supercapacitors for their practical applications in portable and wearable electronics. Although high operating voltages have been achieved in fiber-shaped asymmetric supercapacitors (FASCs), low specific capacitance still restricts the further enhancement of their energy density. This article specifies a facile and cost-effective method to directly grow three-dimensionally well-aligned zinc-nickel-cobalt oxide (ZNCO)@Ni(OH)2 nanowire arrays (NWAs) on a carbon nanotube fiber (CNTF) with an ultrahigh specific capacitance of 2847.5 F/cm3 (10.678 F/cm2) at a current density of 1 mA/cm2, These levels are approximately five times higher than those of ZNCO NWAs/CNTF electrodes (2.10 F/cm2) and four times higher than Ni(OH)2/CNTF electrodes (2.55 F/cm2). Benefiting from their unique features, we successfully fabricated a prototype coaxial FASC (CFASC) with a maximum operating voltage of 1.6 V, which was assembled by adopting ZNCO@Ni(OH)2 NWAs/CNTF as the core electrode and a thin layer of carbon coated vanadium nitride (VN@C) NWAs on a carbon nanotube strip (CNTS) as the outer electrode with KOH poly(vinyl alcohol) (PVA) as the gel electrolyte. A high specific capacitance of 94.67 F/cm3 (573.75 mF/cm2) and an exceptional energy density of 33.66 mWh/cm3 (204.02 µWh/cm2) were achieved for our CFASC device, which represent the highest levels of fiber-shaped supercapacitors to date. More importantly, the fiber-shaped ZnO-based photodetector is powered by the integrated CFASC, and it demonstrates excellent sensitivity in detecting UV light. Thus, this work paves the way to the construction of ultrahigh-capacity electrode materials for next-generation wearable energy-storage devices.

Gate-Controlled BP-WSe2 Heterojunction Diode for Logic Rectifiers and Logic Optoelectronics.

p-n junctions play an important role in modern semiconductor electronics and optoelectronics, and field-effect transistors are often used for logic circuits. Here, gate-controlled logic rectifiers and logic optoelectronic devices based on stacked black phosphorus (BP) and tungsten diselenide (WSe2 ) heterojunctions are reported. The gate-tunable ambipolar charge carriers in BP and WSe2 enable a flexible, dynamic, and wide modulation on the heterojunctions as isotype (p-p and n-n) and anisotype (p-n) diodes, which exhibit disparate rectifying and photovoltaic properties. Based on such characteristics, it is demonstrated that BP-WSe2 heterojunction diodes can be developed for high-performance logic rectifiers and logic optoelectronic devices. Logic optoelectronic devices can convert a light signal to an electric one by applied gate voltages. This work should be helpful to expand the applications of 2D crystals.

Full Two-Dimensional Ambipolar Field-Effect Transistors for Transparent and Flexible Electronics.

The unique features of two-dimensional (2D) materials provide significant opportunities for the development of transparent and flexible electronics. Recently, ambipolar 2D semiconductors have advanced innovative applications such as CMOS-like circuits, reconfigurable circuits, and ultrafast neuromorphic image sensors. Here, we report on the fabrication of full 2D ambipolar field-effect transistors (FETs), in which graphene serves as the source/drain/gate electrodes, WSe2 is for the channel, and h-BN is for the dielectric. The produced ambipolar FETs exhibit comparable on-currents in the n-branch and p-branch with on/off ratios up to 108. By using two ambipolar FETs in series, a CMOS-like inverter is demonstrated with a maximum gain of up to 147, which can work in both the first and third quadrants by controlling the supply voltages and input voltages. The full 2D ambipolar FETs yield a transmittance of over 70% for visible light on transparent glass and achieve a curvature radius of less than 0.5 cm for bending on polyethylene terephthalate (PET) substrate. The work is helpful for the application of ambipolar 2D materials-based devices in transparent and flexible electronics.

Programmable Optical Encryption Based on Electrical-Field-Controlled Exciton-Trion Transitions in Monolayer WS2.

Optical encryption is receiving much attention with the rapid growth of information technology. Conventional optical encryption usually relies on specific configurations, such as metasurface-based holograms and structure colors, not meeting the requirements of increasing dynamic and programmable encryption. Here, we report a programmable optical encryption approach using WS2/SiO2/Au metal-oxide-semiconductor (MOS) devices, which is based on the electrical-field-controlled exciton-trion transitions in monolayer WS2. The modulation depth of the MOS device reflection amplitude up to 25% related to the excitons ensures the fidelity of information, and the decryption based on the near excitonic resonance assures security. With such devices, we successfully demonstrate their applications in real-time encryption of ASCII codes and visual images. For the latter, it can be implemented at the pixel level. The strategy shows significant potential for low-cost, low-energy-consumption, easily integrated, and high-security programmable optical encryptions.

Traditional Chinese Medicine (TCM)-Inspired Fully Printed Soft Pressure Sensor Array with Self-Adaptive Pressurization for Highly Reliable Individualized Long-Term Pulse Diagnostics.

Reliable, non-invasive, continuous monitoring of pulse and blood pressure is essential for the prevention and diagnosis of cardiovascular diseases. However, the pulse wave varies drastically among individuals or even over time in the same individual, presenting significant challenges for the existing pulse sensing systems. Inspired by pulse diagnosis methods in traditional Chinese medicine (TCM), this work reports a self-adaptive pressure sensing platform (PSP) that combines the fully printed flexible pressure sensor array with an adaptive wristband-style pressure system can identify the optimal pulse signal. Besides the detected pulse rate/width/length, "Cun, Guan, Chi" position, and "floating, moderate, sinking" pulse features, the PSP combined with a machine learning-based linear regression model can also accurately predict blood pressure such as systolic, diastolic, and mean arterial pressure values. The developed diagnostic platform is demonstrated for highly reliable long-term monitoring and analysis of pulse and blood pressure across multiple human subjects over time. The design concept and proof-of-the-concept demonstrations also pave the way for the future developments of flexible sensing devices/systems for adaptive individualized monitoring in the complex practical environments for personalized medicine, along with the support for the development of digital TCM.

High drain field impact ionization transistors as ideal switches.

Impact ionization effect has been demonstrated in transistors to enable sub-60 mV dec-1 subthreshold swing. However, traditionally, impact ionization in silicon devices requires a high operation voltage due to limited electrical field near the device drain, contradicting the low energy operation purpose. Here, we report a vertical subthreshold swing device composed of a graphene/silicon heterojunction drain and a silicon channel. This structure creates a low voltage avalanche impact ionization phenomenon and leads to steep switching of the silicon-based device. Experimental measurements reveal a small average subthreshold swing of 16 µV dec-1 over 6 decades of drain current and nearly hysteresis-free, and the operating voltage at which a vertical subthreshold swing occurs can be as low as 0.4 V at room temperature. Furthermore, a complementary silicon-based logic inverter is experimentally demonstrated to reach a voltage gain of 311 at a supply voltage of 2 V.

Controlled fabrication of intermolecular junctions of single-walled carbon nanotube/graphene nanoribbon.

Intramolecular junctions can be formed in single-walled carbon nanotubes (SWNTs) by introducing a pentagon and/or heptagon into the hexagonal carbon lattice. The realization of these carbon-based molecular electronics is still quite challenging. Here, it is reported that nickel or cobalt catalyzed etching can be applied to partially unzip an SWNT into an intermolecular junction of SWNT/graphene nanoribbon, directly confirmed by atomic force microscopy and Raman spectroscopy.

Growth of single crystal zinc oxide beaded nanowires.

Reported here is the growth of single crystal zinc oxide beaded nanowires. The beaded nanowires are composed of nanobeads and ultrafine joint nanorods, which alternatively epitaxially grow along [001] direction of zinc oxide wurtzite structure. The growth mechanism was discussed and a zinc-rich process was proposed. Due to the size confinement, the bandgap along the beaded nanowires is modulated by their diameter and like multiple quantum well structure. Different from traditional multiple quantum well structures through alternate heterogeneous epitaxial growth of semiconductors, this kind of quasi-one-dimensional homogeneous multiple quantum well structures is composed of same substance. Their bandgap is modulated through alternately adjusting their diameter along single crystal nanowires. Further studies exhibit that they are of special properties on photoluminescence and Raman spectra. The demonstration would open the route to synthesize homogeneous multiple quantum well structures, study their fundamental physical phenomena, and exploit their applications.

Chemical Dopant-Free Controlled MoTe2/MoSe2 Heterostructure toward a Self-Driven Photodetector and Complementary Logic Circuits.

Two-dimensional (2D) van der Waals heterostructures based on transition metal dichalcogenides are expected to be unique building blocks for next-generation nanoscale electronics and optoelectronics. The ability to control the properties of 2D heterostructures is the key for practical applications. Here, we report a simple way to fabricate a high-performance self-driven photodetector based on the MoTe2/MoSe2 p-n heterojunction, in which the hole-dominated transport polarity of MoTe2 is easily achieved via a straightforward thermal annealing treatment in air without any chemical dopants or special gases needed. A high photoresponsivity of 0.72 A W-1, an external quantum efficiency up to 41.3%, a detectivity of 7 × 1011 Jones, and a response speed of 120 µs are obtained at zero bias voltage. Additionally, this doping method is also utilized to realize a complementary inverter with a voltage gain of 24. By configuring 2D p-MoTe2 and n-MoSe2 on demand, logic functions of NAND and NOR gates are also accomplished successfully. These results present a significant potential toward future larger-scale heterogeneously integrated 2D electronics and optoelectronics.

Comparison and Verification of Three Algorithms for Accuracy Improvement of Quartz Resonant Pressure Sensors.

Pressure measurement is of great importance due to its wide range of applications in many fields. AT-cut quartz, with its exceptional precision and durability, stands out as an excellent pressure transducer due to its superior accuracy and stable performance over time. However, its intrinsic temperature dependence significantly hinders its potential application in varying temperature environments. Herein, three different learning algorithms (i.e., multivariate polynomial regression, multilayer perceptron networks, and support vector regression) are elaborated in detail and applied to establish the prediction models for compensating the temperature effect of the resonant pressure sensor, respectively. The AC-cut quartz, which is sensitive to temperature variations, is paired with the AT-cut quartz, providing the essential temperature information. The output frequencies derived from the AT-cut and AC-cut quartzes are selected as input data for these learning algorithms. Through experimental validation, all three methods are effective, and a remarkable improvement in accuracy can be achieved. Among the three methods, the MPR model has exceptionally high accuracy in predicting pressure. The calculated residual error over the temperature range of -10-40 °C is less than 0.008% of 40 MPa full scale (FS). An intelligent automatic compensation and real-time processing system for the resonant pressure sensor is developed as well, which may contribute to improving the efficiency in online calibration and large-scale industrialization. This paper paves a promising way for the temperature compensation of resonant pressure sensors.

Boron nitride-enabled printing of a highly sensitive and flexible iontronic pressure sensing system for spatial mapping.

Recently, flexible iontronic pressure sensors (FIPSs) with higher sensitivities and wider sensing ranges than conventional capacitive sensors have been widely investigated. Due to the difficulty of fabricating the nanostructures that are commonly used on electrodes and ionic layers by screen printing techniques, strategies for fabricating such devices using these techniques to drive their mass production have rarely been reported. Herein, for the first time, we employed a 2-dimensional (2D) hexagonal boron nitride (h-BN) as both an additive and an ionic liquid reservoir in an ionic film, making the sensor printable and significantly improving its sensitivity and sensing range through screen printing. The engineered sensor exhibited high sensitivity (Smin> 261.4 kPa-1) and a broad sensing range (0.05-450 kPa), and it was capable of stable operation at a high pressure (400 kPa) for more than 5000 cycles. In addition, the integrated sensor array system allowed accurate monitoring of wrist pressure and showed great potential for health care systems. We believe that using h-BN as an additive in an ionic material for screen-printed FIPS could greatly inspire research on 2D materials for similar systems and other types of sensors. Hexagonal boron nitride (h-BN) was employed for the first time to make iontronic pressure sensor arrays with high sensitivity and a broad sensing range by screen printing.

A Hardware System for Synchronous Processing of Multiple Marine Dynamics MEMS Sensors.

Temperature, depth, conductivity, and turbulence are fundamental parameters of marine dynamics in the field of ocean science. These closely correlated parameters require time-synchronized observations to provide feedback on marine environmental problems, which requires using sensors with synchronized power supply, multi-path data solving, recording, and storage performances. To address this challenge, this work proposes a hardware system capable of synchronously processing temperature, depth, conductivity, and turbulence data on marine dynamics collected by sensors. The proposed system uses constant voltage sources to excite temperature and turbulence sensors, a constant current source to drive a depth sensor, and an alternating current (AC) constant voltage source to drive a conductivity sensor. In addition, the proposed system uses a high-precision analog-digital converter to acquire the direct current (DC) signals from temperature, depth, and turbulence sensors, as well as the AC signals from conductivity sensors. Since the sampling frequency of turbulence sensors is different from that of the other sensors, the proposed system stores the generated data at different storage rates as multiple-files. Further, the proposed hardware system manages these files through a file system (file allocation tab) to reduce the data parsing difficulty. The proposed sensing and hardware logic system is verified and compared with the standard conductivity-temperature-depth measurement system in the National Center of Ocean Standards and Metrology. The results indicate that the proposed system achieved National Verification Level II Standard. In addition, the proposed system has a temperature indication error smaller than 0.02 °C, a conductivity error less than 0.073 mS/cm, and a pressure error lower than 0.8‱ FS. The turbulence sensor shows good response and consistency. Therefore, for observation methods based on a single point, single line, and single profile, it is necessary to study multi-parameter data synchronous acquisition and processing in the time and spatial domains to collect fundamental physical quantities of temperature, salt, depth, and turbulence. The four basic physical parameters collected by the proposed system are beneficial to the in-depth research on physical ocean motion, heat transfer, energy transfer, mass transfer, and heat-energy-mass coupling and can help to realize accurate simulation, inversion, and prediction of ocean phenomena.

Enhancement of the Transmission Performance of Piezoelectric Micromachined Ultrasound Transducers by Vibration Mode Optimization.

Ultrasound is widely used in industry and the agricultural, biomedical, military, and other fields. As key components in ultrasonic applications, the characteristic parameters of ultrasonic transducers fundamentally determine the performance of ultrasonic systems. High-frequency ultrasonic transducers are small in size and require high precision, which puts forward higher requirements for sensor design, material selection, and processing methods. In this paper, a three-dimensional model of a high-frequency piezoelectric micromachined ultrasonic transducer (PMUT) is established based on the finite element method (FEM). This 3D model consists of a substrate, a silicon device layer, and a molybdenum-aluminum nitride-molybdenum (Mo-AlN-Mo) sandwich piezoelectric layer. The effect of the shape of the transducer's vibrating membrane on the transmission performance was studied. Through a discussion of the parametric scanning of the key dimensions of the diaphragms of the three structures, it was concluded that the fundamental resonance frequency of the hexagonal diaphragm was higher than that of the circle and the square under the same size. Compared with the circular diaphragm, the sensitivity of the square diaphragm increased by 8.5%, and the sensitivity of the hexagonal diaphragm increased by 10.7%. The maximum emission sound-pressure level of the hexagonal diaphragm was 6.6 times higher than that of the circular diaphragm. The finite element results show that the hexagonal diaphragm design has great advantages for improving the transmission performance of the high-frequency PMUT.

Effect of L-Ascorbic Acid Solution Concentration on the Thermoelectric Properties of Silver Selenide Flexible Films Prepared by Vacuum-Assisted Filtration.

Currently, there are several thermoelectric materials, such as Ag2Te, Bi2Te3, and Sb2Te3, that have been investigated for thermoelectric applications. However, the toxicity and rarity of most of these materials make them unsuitable for practical applications. In contrast, silver selenide (Ag2Se) is an abundant and environment-friendly thermoelectric material. This study provides a facile synthetic approach for preparing high-performance, low-cost, and flexible Ag2Se thermoelectric films. Ag2Se nanomaterials were prepared based on the chemical template method, and the reaction solution concentration was varied to systematically investigate the effects of reaction solution concentration on the characterization and thermoelectric properties of Ag2Se nanomaterials. For convenience of testing, the flexible Ag2Se films were prepared on porous nylon membranes using vacuum-assisted filtration. The prepared thermoelectric films were tested using an X-ray diffractometer, scanning electron microscope, Seebeck coefficient tester, and Hall tester. The film prepared from the solution with the lowest concentration (18.0 mM) demonstrated the best thermoelectric performance, with a maximum power factor of 382.18 µW∙m-1∙K-2 at ~400 K. Additionally, a cold-pressing treatment could effectively enhance the electrical conductivity of the film, without damaging the substrate, as the conductivity of the film remained at 90% of the original value after 1500 bending cycles.

A Direct-Reading MEMS Conductivity Sensor with a Parallel-Symmetric Four-Electrode Configuration.

This work proposes a design for a direct-reading conductivity sensor with a parallel symmetrical four-electrode structure, which integrates a silicon-based platinum thin-film strip electrode and a serpentine temperature compensation electrode. The optimal structural parameters of the electrode were determined by finite element simulations performed via COMSOL Multiphysics. Next, the designed conductivity sensor chip was fabricated using MEMS technology, and subsequently, the conductivity measurement circuit was designed to test the fabricated sensor's performance. In laboratory tests, the optimal AC excitation frequency was observed to be 1.067 kHz, while the maximum measurement range was 0-107.41 mS/cm and the measurement precision in low concentration range (0-76.422 mS/cm) was ±0.1 mS/cm. Furthermore, the maximum measurement error of the sensor evaluated using the National Center of Ocean Standards and Metrology was ±0.073 mS/cm. The designed sensor possesses the characteristics of high accuracy, high range, and miniaturization, and enables real-time reading of conductivity value and temperature compensation, which is of great significance for the on-site observation of the physical parameters of marine environment.

Design of a Novel Medical Acoustic Sensor Based on MEMS Bionic Fish Ear Structure.

High-performance medical acoustic sensors are essential in medical equipment and diagnosis. Commercially available medical acoustic sensors are capacitive and piezoelectric types. When they are used to detect heart sound signals, there is attenuation and distortion due to the sound transmission between different media. This paper proposes a new bionic acoustic sensor based on the fish ear structure. Through theoretical analysis and finite element simulation, the optimal parameters of the sensitive structure are determined. The sensor is fabricated using microelectromechanical systems (MEMS) technology, and is encapsulated in castor oil, which has an acoustic impedance close to the human body. An electroacoustic test platform is built to test the performance of the sensor. The results showed that the MEMS bionic sensor operated with a bandwidth of 20-2k Hz. Its linearity and frequency responses were better than the electret microphone. In addition, the sensor was tested for heart sound collection application to verify its effectiveness. The proposed sensor can be effectively used in clinical auscultation and has a high SNR.