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Quantum criticality in a Mott pn junction in an armchair carbon nanotube.
Chen, Wei; Andreev, A V; Glazman, L I.
Afiliação
  • Chen W; Department of Physics, University of Washington, Seattle, Washington 98195-1560, USA.
Phys Rev Lett ; 106(21): 216801, 2011 May 27.
Article em En | MEDLINE | ID: mdl-21699326
ABSTRACT
In an armchair carbon nanotube pn junction the p and n regions are separated by a region of a Mott insulator, which can backscatter electrons only in pairs. We predict a quantum-critical behavior in such a pn junction. Depending on the junction's built-in electric field E, its conductance G scales either to zero or to 4e(2)/h as the temperature T is lowered. The two types of the G(T) dependence indicate the existence, at some special value of E, of an intermediate quantum-critical point with a finite conductance G<4e(2)/h. This makes the pn junction drastically different from a simple potential barrier in a Luttinger liquid.
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Coleções: 01-internacional Base de dados: MEDLINE Idioma: En Revista: Phys Rev Lett Ano de publicação: 2011 Tipo de documento: Article País de afiliação: Estados Unidos
Buscar no Google
Coleções: 01-internacional Base de dados: MEDLINE Idioma: En Revista: Phys Rev Lett Ano de publicação: 2011 Tipo de documento: Article País de afiliação: Estados Unidos