Modeling of temperature and excitation dependences of efficiency in an InGaN light-emitting diode.
Opt Express
; 22(2): 1413-25, 2014 Jan 27.
Article
em En
| MEDLINE
| ID: mdl-24515149
ABSTRACT
The changes in excitation dependence of efficiency with temperature are modeled for a wurtzite InGaN light-emitting diode. The model incorporates bandstructure changes with carrier density because of screening of quantum-confined Stark effect. Bandstructure is computed by solving Poisson and k · p equations in the envelope approximation. The information is used in a dynamical model for populations in momentum-resolved electron and hole states. Application of the approach shows the interplay of quantum-well and barrier emissions giving rise to shape changes in efficiency versus current density with changing temperature, as observed in some experiments.
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Coleções:
01-internacional
Base de dados:
MEDLINE
Idioma:
En
Revista:
Opt Express
Assunto da revista:
OFTALMOLOGIA
Ano de publicação:
2014
Tipo de documento:
Article