3D strain measurement in electronic devices using through-focal annular dark-field imaging.
Ultramicroscopy
; 146: 1-5, 2014 Nov.
Article
em En
| MEDLINE
| ID: mdl-24859824
ABSTRACT
Spherical aberration correction in high-angle annular dark-field scanning transmission electron microscopy (HAADF-STEM) allows us to form an electron probe with reduced depth of field. Using through-focal HAADF imaging, we experimentally demonstrated 3D strain measurement in a strained-channel transistor. The strain field distribution in the channel region was obtained by scanning an electron beam over a plan-view specimen. Furthermore, the decrease in the strain fields toward the silicon substrate was revealed at different focal planes with a 5-nm focal step. These results demonstrate that it is possible to reconstruct the 3D strain field in electronic devices.
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Coleções:
01-internacional
Base de dados:
MEDLINE
Idioma:
En
Revista:
Ultramicroscopy
Ano de publicação:
2014
Tipo de documento:
Article