High breakdown voltage in AlGaN/GaN HEMTs using AlGaN/GaN/AlGaN quantum-well electron-blocking layers.

Lee, Ya-Ju; Yao, Yung-Chi; Huang, Chun-Ying; Lin, Tai-Yuan; Cheng, Li-Lien; Liu, Ching-Yun; Wang, Mei-Tan; Hwang, Jung-Min

Lee, Ya-Ju; Yao, Yung-Chi; Huang, Chun-Ying; Lin, Tai-Yuan; Cheng, Li-Lien; Liu, Ching-Yun; Wang, Mei-Tan; Hwang, Jung-Min.

Afiliação

Lee YJ; Institute of Electro-Optical Science and Technology, National Taiwan Normal University, 88, Sec. 4, Ting-Chou Road, Taipei 116, Taiwan.
Yao YC; Institute of Electro-Optical Science and Technology, National Taiwan Normal University, 88, Sec. 4, Ting-Chou Road, Taipei 116, Taiwan.
Huang CY; Institute of Electronics Engineering, National Taiwan University, 1, Sec. 4, Roosevelt Road, Taipei 106, Taiwan.
Lin TY; Institute of Optoelectronic Sciences, National Taiwan Ocean University, 2, Pei-Ning Road, Keelung 202, Taiwan.
Cheng LL; Institute of Electro-Optical Science and Technology, National Taiwan Normal University, 88, Sec. 4, Ting-Chou Road, Taipei 116, Taiwan.
Liu CY; Institute of Electro-Optical Science and Technology, National Taiwan Normal University, 88, Sec. 4, Ting-Chou Road, Taipei 116, Taiwan.
Wang MT; Solid-State Lighting Systems Department, Green Energy and Environment Research Laboratories, Industrial Technology Research Institute (ITRI), Hsinchu 310, Taiwan.
Hwang JM; Solid-State Lighting Systems Department, Green Energy and Environment Research Laboratories, Industrial Technology Research Institute (ITRI), Hsinchu 310, Taiwan.

Nanoscale Res Lett ; 9(1): 433, 2014.

Article em En | MEDLINE | ID: mdl-25206318

Palavras-chave

2-DEG; AlGaN/GaN HEMT; Breakdown voltage

Texto completo

Imprimir

XML

PubMed Links

Buscar no Google

Texto completo: 1 Coleções: 01-internacional Base de dados: MEDLINE Idioma: En Revista: Nanoscale Res Lett Ano de publicação: 2014 Tipo de documento: Article País de afiliação: Taiwan

Texto completo

Imprimir

XML

PubMed Links

Buscar no Google