Suspended graphene devices with local gate control on an insulating substrate.
Nanotechnology
; 26(40): 405201, 2015 Oct 09.
Article
em En
| MEDLINE
| ID: mdl-26377034
ABSTRACT
We present a fabrication process for graphene-based devices where a graphene monolayer is suspended above a local metallic gate placed in a trench. As an example we detail the fabrication steps of a graphene field-effect transistor. The devices are built on a bare high-resistivity silicon substrate. At temperatures of 77 K and below, we observe the field-effect modulation of the graphene resistivity by a voltage applied to the gate. This fabrication approach enables new experiments involving graphene-based superconducting qubits and nano-electromechanical resonators. The method is applicable to other two-dimensional materials.
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1
Coleções:
01-internacional
Base de dados:
MEDLINE
Idioma:
En
Revista:
Nanotechnology
Ano de publicação:
2015
Tipo de documento:
Article
País de afiliação:
Canadá