Improved Endurance and Resistive Switching Stability in Ceria Thin Films Due to Charge Transfer Ability of Al Dopant.

Ismail, M; Ahmed, E; Rana, A M; Hussain, F; Talib, I; Nadeem, M Y; Panda, D; Shah, N A

Ismail, M; Ahmed, E; Rana, A M; Hussain, F; Talib, I; Nadeem, M Y; Panda, D; Shah, N A.

Afiliação

Ismail M; Department of Physics, Bahauddin Zakariya University , Multan 60800, Pakistan.
Ahmed E; Department of Physics, Bahauddin Zakariya University , Multan 60800, Pakistan.
Rana AM; Department of Physics, Bahauddin Zakariya University , Multan 60800, Pakistan.
Hussain F; Department of Physics, Bahauddin Zakariya University , Multan 60800, Pakistan.
Talib I; Department of Physics, Bahauddin Zakariya University , Multan 60800, Pakistan.
Nadeem MY; Department of Physics, Bahauddin Zakariya University , Multan 60800, Pakistan.
Panda D; Department of Electronics Engineering, National Institute of Science and Technology , Berhampur, Orrisa India.
Shah NA; Thin films Technology Research Laboratory, Department of Physics, COMSATS Institute of Information Technology , Islamabad 45320, Pakistan.

ACS Appl Mater Interfaces ; 8(9): 6127-36, 2016 Mar 09.

Article em En | MEDLINE | ID: mdl-26881895

Palavras-chave

Al-doping; RRAM; ceria; density functional theory; resistive switching

Texto completo

Imprimir

XML

PubMed Links

Buscar no Google

Texto completo: 1 Coleções: 01-internacional Base de dados: MEDLINE Idioma: En Revista: ACS Appl Mater Interfaces Assunto da revista: BIOTECNOLOGIA / ENGENHARIA BIOMEDICA Ano de publicação: 2016 Tipo de documento: Article País de afiliação: Paquistão

Texto completo

Imprimir

XML

PubMed Links

Buscar no Google