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Picosecond Electric-Field-Induced Threshold Switching in Phase-Change Materials.
Zalden, Peter; Shu, Michael J; Chen, Frank; Wu, Xiaoxi; Zhu, Yi; Wen, Haidan; Johnston, Scott; Shen, Zhi-Xun; Landreman, Patrick; Brongersma, Mark; Fong, Scott W; Wong, H-S Philip; Sher, Meng-Ju; Jost, Peter; Kaes, Matthias; Salinga, Martin; von Hoegen, Alexander; Wuttig, Matthias; Lindenberg, Aaron M.
Afiliação
  • Zalden P; Stanford Institute for Materials and Energy Sciences, SLAC National Accelerator Laboratory, Menlo Park, California 94025, USA.
  • Shu MJ; PULSE Institute, SLAC National Accelerator Laboratory, Menlo Park, California 94025, USA.
  • Chen F; Stanford Institute for Materials and Energy Sciences, SLAC National Accelerator Laboratory, Menlo Park, California 94025, USA.
  • Wu X; Department of Applied Physics, Stanford University, Stanford, California 94305, USA.
  • Zhu Y; Stanford Institute for Materials and Energy Sciences, SLAC National Accelerator Laboratory, Menlo Park, California 94025, USA.
  • Wen H; Department of Electrical Engineering, Stanford University, Stanford, California 94305, USA.
  • Johnston S; Stanford Institute for Materials and Energy Sciences, SLAC National Accelerator Laboratory, Menlo Park, California 94025, USA.
  • Shen ZX; Advanced Photon Source, Argonne National Laboratory, Argonne, Illinois 60439, USA.
  • Landreman P; Advanced Photon Source, Argonne National Laboratory, Argonne, Illinois 60439, USA.
  • Brongersma M; Department of Applied Physics, Stanford University, Stanford, California 94305, USA.
  • Fong SW; Department of Applied Physics, Stanford University, Stanford, California 94305, USA.
  • Wong HS; Department of Materials Science and Engineering, Stanford University, Stanford, California 94305, USA.
  • Sher MJ; Department of Materials Science and Engineering, Stanford University, Stanford, California 94305, USA.
  • Jost P; Department of Electrical Engineering, Stanford University, Stanford, California 94305, USA.
  • Kaes M; Department of Electrical Engineering, Stanford University, Stanford, California 94305, USA.
  • Salinga M; Department of Materials Science and Engineering, Stanford University, Stanford, California 94305, USA.
  • von Hoegen A; I. Physikalisches Institut (IA), RWTH Aachen University, 52056 Aachen, Germany.
  • Wuttig M; I. Physikalisches Institut (IA), RWTH Aachen University, 52056 Aachen, Germany.
  • Lindenberg AM; I. Physikalisches Institut (IA), RWTH Aachen University, 52056 Aachen, Germany.
Phys Rev Lett ; 117(6): 067601, 2016 Aug 05.
Article em En | MEDLINE | ID: mdl-27541475
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Texto completo: 1 Coleções: 01-internacional Base de dados: MEDLINE Idioma: En Revista: Phys Rev Lett Ano de publicação: 2016 Tipo de documento: Article País de afiliação: Estados Unidos
Texto completo
Imprimir
XML
PubMed Links
Buscar no Google

Texto completo: 1 Coleções: 01-internacional Base de dados: MEDLINE Idioma: En Revista: Phys Rev Lett Ano de publicação: 2016 Tipo de documento: Article País de afiliação: Estados Unidos