Determination of the electron-capture coefficients and the concentration of free electrons in GaN from time-resolved photoluminescence.

Reshchikov, M A; McNamara, J D; Toporkov, M; Avrutin, V; Morkoç, H; Usikov, A; Helava, H; Makarov, Yu

Reshchikov, M A; McNamara, J D; Toporkov, M; Avrutin, V; Morkoç, H; Usikov, A; Helava, H; Makarov, Yu.

Afiliação

Reshchikov MA; Department of Physics, Virginia Commonwealth University, Richmond, VA 23284, USA.
McNamara JD; Department of Physics, Virginia Commonwealth University, Richmond, VA 23284, USA.
Toporkov M; Department of Electrical and Computer Engineering, Virginia Commonwealth University, Richmond, VA 23284, USA.
Avrutin V; Department of Electrical and Computer Engineering, Virginia Commonwealth University, Richmond, VA 23284, USA.
Morkoç H; Department of Physics, Virginia Commonwealth University, Richmond, VA 23284, USA.
Usikov A; Department of Electrical and Computer Engineering, Virginia Commonwealth University, Richmond, VA 23284, USA.
Helava H; Nitride Crystals, Inc. 181E Industry Ct., Ste. B, Deer Park, NY 11729, USA.
Makarov Y; Saint-Petersburg National Research University of Information Technologies, Mechanics and Optics, 49 Kronverkskiy Ave., 197101 Saint Petersburg, Russia.

Sci Rep ; 6: 37511, 2016 11 30.

Article em En | MEDLINE | ID: mdl-27901025

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Texto completo: 1 Coleções: 01-internacional Base de dados: MEDLINE Idioma: En Revista: Sci Rep Ano de publicação: 2016 Tipo de documento: Article País de afiliação: Estados Unidos

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