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Inter-Layer Coupling Induced Valence Band Edge Shift in Mono- to Few-Layer MoS2.
Trainer, Daniel J; Putilov, Aleksei V; Di Giorgio, Cinzia; Saari, Timo; Wang, Baokai; Wolak, Mattheus; Chandrasena, Ravini U; Lane, Christopher; Chang, Tay-Rong; Jeng, Horng-Tay; Lin, Hsin; Kronast, Florian; Gray, Alexander X; Xi, Xiaoxing; Nieminen, Jouko; Bansil, Arun; Iavarone, Maria.
Afiliação
  • Trainer DJ; Physics Department, Temple University, Philadelphia PA 19122, USA.
  • Putilov AV; Physics Department, Temple University, Philadelphia PA 19122, USA.
  • Di Giorgio C; Physics Department, Temple University, Philadelphia PA 19122, USA.
  • Saari T; Department of Physics, Tampere University of Technology, Tampere, Finland.
  • Wang B; Physics Department, Northeastern University, Boston MA 02115, USA.
  • Wolak M; Physics Department, Temple University, Philadelphia PA 19122, USA.
  • Chandrasena RU; Physics Department, Temple University, Philadelphia PA 19122, USA.
  • Lane C; Physics Department, Northeastern University, Boston MA 02115, USA.
  • Chang TR; Department of Physics, National Tsing Hua University, Hsinchu 30013, Taiwan.
  • Jeng HT; Department of Physics, National Tsing Hua University, Hsinchu 30013, Taiwan.
  • Lin H; Institute of Physics, Academia Sinica, Taipei 11529, Taiwan.
  • Kronast F; Centre for Advanced 2D Materials and Graphene Research Centre, National University of Singapore, 117546 Singapore.
  • Gray AX; Department of Physics, National University of Singapore, 117546 Singapore.
  • Xi X; Helmholtz-Zentrum Berlin für Materialien und Energie, Albert-Einstein Straße 15, 12489 Berlin, Germany.
  • Nieminen J; Physics Department, Temple University, Philadelphia PA 19122, USA.
  • Bansil A; Physics Department, Temple University, Philadelphia PA 19122, USA.
  • Iavarone M; Department of Physics, Tampere University of Technology, Tampere, Finland.
Sci Rep ; 7: 40559, 2017 01 13.
Article em En | MEDLINE | ID: mdl-28084465
ABSTRACT
Recent progress in the synthesis of monolayer MoS2, a two-dimensional direct band-gap semiconductor, is paving new pathways toward atomically thin electronics. Despite the large amount of literature, fundamental gaps remain in understanding electronic properties at the nanoscale. Here, we report a study of highly crystalline islands of MoS2 grown via a refined chemical vapor deposition synthesis technique. Using high resolution scanning tunneling microscopy and spectroscopy (STM/STS), photoemission electron microscopy/spectroscopy (PEEM) and µ-ARPES we investigate the electronic properties of MoS2 as a function of the number of layers at the nanoscale and show in-depth how the band gap is affected by a shift of the valence band edge as a function of the layer number. Green's function based electronic structure calculations were carried out in order to shed light on the mechanism underlying the observed bandgap reduction with increasing thickness, and the role of the interfacial Sulphur atoms is clarified. Our study, which gives new insight into the variation of electronic properties of MoS2 films with thickness bears directly on junction properties of MoS2, and thus impacts electronics application of MoS2.

Texto completo: 1 Coleções: 01-internacional Base de dados: MEDLINE Idioma: En Revista: Sci Rep Ano de publicação: 2017 Tipo de documento: Article País de afiliação: Estados Unidos

Texto completo: 1 Coleções: 01-internacional Base de dados: MEDLINE Idioma: En Revista: Sci Rep Ano de publicação: 2017 Tipo de documento: Article País de afiliação: Estados Unidos