Characterization of a Ferroelectric-Gated Graphene Memory Device Fabricated on a Flexible Substrate by Transfer Process.

ABSTRACT

The mechanical flexibility of both ferroelectric polymer and graphene provides the possibility for the memory device based on ferroelectric polymer and grapheme to operate on flexible substrate. Here, a memory device was fabricated on flexible substrate through the continuous transfer process of the two units with the ferroelectric polymer and the graphene hybrid film as one unit, and characterized. In particular, characteristics were maintained even with repetitive bending. The transfer process demonstrated in this paper is useful for implementing a memory device on a large-area substrate by consuming a very small amount of graphene.