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Fast Spiking of a Mott VO2-Carbon Nanotube Composite Device.
Bohaichuk, Stephanie M; Kumar, Suhas; Pitner, Greg; McClellan, Connor J; Jeong, Jaewoo; Samant, Mahesh G; Wong, H-S Philip; Parkin, Stuart S P; Williams, R Stanley; Pop, Eric.
Afiliação
  • Bohaichuk SM; Electrical Engineering , Stanford University , Stanford , California 94305 , United States.
  • Kumar S; Hewlett-Packard Laboratories , 1501 Page Mill Road , Palo Alto , California 94304 , United States.
  • Pitner G; Electrical Engineering , Stanford University , Stanford , California 94305 , United States.
  • McClellan CJ; Electrical Engineering , Stanford University , Stanford , California 94305 , United States.
  • Jeong J; IBM Almaden Research Center , 650 Harry Road , San Jose , California 95120 , United States.
  • Samant MG; IBM Almaden Research Center , 650 Harry Road , San Jose , California 95120 , United States.
  • Wong HP; Electrical Engineering , Stanford University , Stanford , California 94305 , United States.
  • Parkin SSP; IBM Almaden Research Center , 650 Harry Road , San Jose , California 95120 , United States.
  • Williams RS; Electrical and Computer Engineering , Texas A&M University , College Station , Texas 77843 , United States.
  • Pop E; Electrical Engineering , Stanford University , Stanford , California 94305 , United States.
Nano Lett ; 19(10): 6751-6755, 2019 10 09.
Article em En | MEDLINE | ID: mdl-31433663
ABSTRACT
The recent surge of interest in brain-inspired computing and power-efficient electronics has dramatically bolstered development of computation and communication using neuron-like spiking signals. Devices that can produce rapid and energy-efficient spiking could significantly advance these applications. Here we demonstrate direct current or voltage-driven periodic spiking with sub-20 ns pulse widths from a single device composed of a thin VO2 film with a metallic carbon nanotube as a nanoscale heater, without using an external capacitor. Compared with VO2-only devices, adding the nanotube heater dramatically decreases the transient duration and pulse energy, and increases the spiking frequency, by up to 3 orders of magnitude. This is caused by heating and cooling of the VO2 across its insulator-metal transition being localized to a nanoscale conduction channel in an otherwise bulk medium. This result provides an important component of energy-efficient neuromorphic computing systems and a lithography-free technique for energy-scaling of electronic devices that operate via bulk mechanisms.
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Texto completo: 1 Coleções: 01-internacional Base de dados: MEDLINE Idioma: En Revista: Nano Lett Ano de publicação: 2019 Tipo de documento: Article País de afiliação: Estados Unidos

Texto completo: 1 Coleções: 01-internacional Base de dados: MEDLINE Idioma: En Revista: Nano Lett Ano de publicação: 2019 Tipo de documento: Article País de afiliação: Estados Unidos