A compact, ultra-high vacuum ion source for isotopically enriching and depositing <sup>28</sup>Si thin films.

Tang, K; Kim, H S; Ramanayaka, A N R; Simons, D S; Pomeroy, J M

A compact, ultra-high vacuum ion source for isotopically enriching and depositing ²⁸Si thin films.

Tang, K; Kim, H S; Ramanayaka, A N R; Simons, D S; Pomeroy, J M.

Afiliação

Tang K; Department of Materials Science and Engineering, University of Maryland, College Park, Maryland 20740, USA.
Kim HS; National Institute of Standards and Technology, Gaithersburg, Maryland 20899-8423, USA.
Ramanayaka ANR; National Institute of Standards and Technology, Gaithersburg, Maryland 20899-8423, USA.
Simons DS; National Institute of Standards and Technology, Gaithersburg, Maryland 20899-8423, USA.
Pomeroy JM; National Institute of Standards and Technology, Gaithersburg, Maryland 20899-8423, USA.

Rev Sci Instrum ; 90(8): 083308, 2019 Aug.

Article em En | MEDLINE | ID: mdl-31472599

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Texto completo: 1 Coleções: 01-internacional Base de dados: MEDLINE Idioma: En Revista: Rev Sci Instrum Ano de publicação: 2019 Tipo de documento: Article País de afiliação: Estados Unidos

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