Graphene and two-dimensional materials for silicon technology.

Akinwande, Deji; Huyghebaert, Cedric; Wang, Ching-Hua; Serna, Martha I; Goossens, Stijn; Li, Lain-Jong; Wong, H-S Philip; Koppens, Frank H L

Akinwande, Deji; Huyghebaert, Cedric; Wang, Ching-Hua; Serna, Martha I; Goossens, Stijn; Li, Lain-Jong; Wong, H-S Philip; Koppens, Frank H L.

Afiliação

Akinwande D; Microelectronics Research Center, Department of Electrical and Computer Engineering, The University of Texas at Austin, Austin, TX, USA. deji@ece.utexas.edu.
Huyghebaert C; IMEC, Leuven, Belgium.
Wang CH; Department of Electrical Engineering, Stanford University, Stanford, CA, USA.
Serna MI; Microelectronics Research Center, Department of Electrical and Computer Engineering, The University of Texas at Austin, Austin, TX, USA.
Goossens S; ICFO-Institut de Ciencies Fotoniques, The Barcelona Institute of Science and Technology, Castelldefels (Barcelona), Barcelona, Spain.
Li LJ; Corporate Research, Taiwan Semiconductor Manufacturing Company (TSMC), Hsinchu, Taiwan.
Wong HP; Department of Electrical Engineering, Stanford University, Stanford, CA, USA.
Koppens FHL; Corporate Research, Taiwan Semiconductor Manufacturing Company (TSMC), Hsinchu, Taiwan.

Nature ; 573(7775): 507-518, 2019 09.

Article em En | MEDLINE | ID: mdl-31554977

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Texto completo: 1 Coleções: 01-internacional Base de dados: MEDLINE Idioma: En Revista: Nature Ano de publicação: 2019 Tipo de documento: Article País de afiliação: Estados Unidos

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